Invention Patent
- Patent Title: Structure for electromagnetic wave generation/detection, optical semiconductor equipment, and manufacturing method of the structure for electromagnetic wave generation/detection
- Patent Title (中): 用于电磁波生成/检测的结构，光学半导体器件和用于电磁波生成/检测的结构的制造方法
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Application No.: JP2005058438Application Date: 2005-03-03
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Publication No.: JP2005311310APublication Date: 2005-11-04
- Inventor: KASAI SHINTARO , WATANABE TAKETOSHI , OTSUKA MITSURU , ONOUCHI TOSHIHIKO , MUKAIDE TAIHEI
- Applicant: Canon Inc , キヤノン株式会社
- Assignee: Canon Inc,キヤノン株式会社
- Current Assignee: Canon Inc,キヤノン株式会社
- Priority: JP2004092400 2004-03-26; JP2005058438 2005-03-03
- Main IPC: G02F2/02
- IPC: G02F2/02 ; G01J5/02 ; H01L21/00 ; H01L27/15 ; H01L29/26 ; H01L31/0248 ; H01L31/103 ; H01L31/12 ; H01L31/18 ; H01S1/02 ; H01S5/04 ; H01S5/30
Abstract:
PROBLEM TO BE SOLVED: To provide a technology improving an optical-electromagnetic wave converting efficiency and an electromagnetic wave detecting sensitivity, in a structure for electromagnetic generation/detection which is used for generating or detecting electromagnetic waves. SOLUTION: The structure for the electromagnetic wave generation/detection, which is used for generating or detecting the electromagnetic wave, is manufactured by a method comprising: a process of forming a layer 2 containing a compound semiconductor on a substrate 1 at a substrate temperature of about 300°C or less; a first heating process of heating the substrate 1 having the layer 2 in an atmosphere containing arsenic; and a second heating process of heating the substrate 1 having the layer 2 in a gas atmosphere not reacting chemically with the compound semiconductor at the substrate temperature of about 600°C or higher. COPYRIGHT: (C)2006,JPO&NCIPI
Public/Granted literature
- JP4785392B2 Production method of generating element of the terahertz electromagnetic wave Public/Granted day:2011-10-05
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