Semiconductor heterostructures (12) a plurality of layers of p-type and n-type semiconductor material acting respectively for holes and electrons in conduction in (15, 15 ', 15' ', 15' ''), and each is inserted between one of said layers of one n-type semiconductor material of the layer of p-type semiconductor material, one of said layers of one and the n-type semiconductor material of the layer of p-type semiconductor material (15 , 15 ', 15' ', 15' '') and in direct contact, at least two layers of luminescent material (16, 16 ', the heterostructure composed by 16' ') (12) therein there, an electroluminescent organic transistor (1).