To provide a semiconductor storage device capable of easily achieving higher integration.SOLUTION: A semiconductor storage device comprises: a plurality of first conductive layers 110A disposed separated from each other in a first direction and extending in a second direction crossing the first direction; a plurality of second conductive layers 110B disposed separated from the plurality of first conductive layers in the first direction and extending in the second direction; a semiconductor layer 120 extending in the first direction and facing the plurality of first conductive layers and the plurality of second conductive layers; a gate insulation layer 130 provided between the plurality of first conductive layers and the plurality of second conductive layers, and the semiconductor layer; a plurality of first insulation units ST extending in the plurality of first conductive layers and the plurality of second conductive layers in the first and second directions and segmenting the plurality of first conductive layers and the plurality of second conductive layers in a third direction crossing the first and second directions; and a plurality of second insulation units SHE extending in the plurality of second conductive layers in the first and second directions and segmenting the plurality of second conductive layers into two or more pieces between first insulation units being adjacent in the third direction. The plurality of first conductive layers are continuously formed from a first material per layer between the first insulation units being adjacent in the third direction, and the plurality of second conductive layers are formed from a second material different from the first material.SELECTED DRAWING: Figure 8