Invention Patent
- Patent Title: Crystal semiconductor film forming method to the glass substrate
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Application No.: JP52088198Application Date: 1997-11-06
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Publication No.: JP4427104B2Publication Date: 2010-03-03
- Inventor: マーティン アンドリュー グリーン , ジングジャー ジー , チェングロン シー , ボール アラン ベイサー
- Applicant: シーエスジー ソーラー アクチエンゲゼルシャフト
- Assignee: シーエスジー ソーラー アクチエンゲゼルシャフト
- Current Assignee: シーエスジー ソーラー アクチエンゲゼルシャフト
- Priority: AUPO347196 1996-11-06
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L31/04 ; C03C17/22 ; C03C17/245 ; C03C17/34 ; C30B1/02 ; C30B25/00 ; C30B25/18 ; C30B28/02 ; C30B29/06 ; C30B33/02 ; H01L21/84 ; H01L31/0392 ; H01L31/18
Abstract:
A method of crystallizing amorphous silicon on a glass substrate relies on deliberately heating the glass substrate above its strain point during processing, making low temperature glasses, such as soda lime glasses, ideal for such use. Since the glass is plastic above this temperature while the silicon remains elastic, the glass is forced to conform to the shape defined by the silicon once this temperature is exceeded. This process relaxes any stresses which might otherwise be created in the glass or film, as long as the glass temperature is above the strain point. As the glass temperature is reduced back below the strain point, the glass becomes progressively more rigid and stresses will begin to build up in the film and glass. When cooled slowly, the stress in the film and the glass can be controlled by appropriate selection of a thermal expansion coefficient of the glass relative to that of silicon, particularly those with linear expansion coefficients in the range 4-10 ppm/° C. below the strain point.
Public/Granted literature
- JP2001503917A Public/Granted day:2001-03-21
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