制造半导体器件的方法包括在衬底上形成栅极图案，形成间隔物以覆盖栅极图案的两个侧壁，形成层间绝缘层以覆盖栅极图案和间隔物，并形成穿透层间绝缘层的接触孔 并暴露间隔物的侧壁。 间隔件的形成包括形成间隔层以覆盖栅极图案并将硅离子注入间隔层。 间隔层是介电常数低于氧化硅的介电常数的氮化物基低k绝缘层。

The present invention relates to a method for manufacturing a semiconductor device including a field effect transistor, to form a gate pattern on the substrate in more detail; To form a spacer that covers the side walls of the gate pattern; To form an interlayer insulating film covering the gate pattern and the spacer; And it may include, while passing through the interlayer insulating film, forming a contact hole that exposes the side wall of the spacer. In this case, forming of the spacers: spacer to form a film to cover the gate pattern; And a performing a silicon ion implantation into the spacer film, the dielectric constant than silicon oxide film the spacer may be a low-k insulating film of the lower nitride series.