这里描述的实施例一般涉及选择性沉积金属硅化物的方法。 更具体地，在此描述的实施方式通常涉及用于形成用于半导体应用的硅化镍纳米线的方法。 在一个实施例中，提供了一种处理衬底的方法。 该方法包括在衬底的表面上形成含硅层; 在含硅层上形成包含过渡金属的含金属层; 在含金属层的暴露表面上形成限制层; 并且在仅约400摄氏度的温度下退火衬底以从含硅层和含金属层形成金属硅化物层，其中所述顺应层是富金属硅化物相， Lt。

Embodiments described herein generally relates to the selective deposition of metal silicide. More specifically, the implementation described herein, for example, relate to general, the method of forming a nickel silicide nanowires for semiconductor applications. In one embodiment, a method is provided for processing a substrate. Method, the silicon on the surface of the substrate, to form a containing layer; Forming a layer containing a silicon-containing layer on the transition metal containing metal (transition metal); Forming a confinement (confinement) layer on the exposed surface of the containing layer - metal; And silicon-containing layer and the metal-to form a metal silicide layer from containing layer, and a substrate comprising the step of annealing at a temperature below 400 degrees Celsius, confinement layers are metal-rich (metal-rich) the metal silicide prevent the formation of (phase).