本发明的各个方面提出了一种功率MOSFET组件的端接结构。端接沟槽形成在半导体材料中，包围着MOSFET的主动区。端接沟槽更包含导电材料的第一和第二部分。导电材料的第一和第二部分相互电绝缘。要强调的是，本发明摘要必须使研究人员或其他读者快速掌握技术说明书的主旨内容，本发明摘要符合以上要求。应明确，本摘要将不用于解释或局限申请专利范围的范围或意图。

Aspects of the present disclosure describe a termination structure for a power MOSFET device. A termination trench may be formed into a semiconductor material and may encircle an active area of the MOSFET. The termination trench may comprise a first and second portion of conductive material. The first and second portions of conductive material are electrically isolated from each other. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.