本发明提供一种半导体设备及其制造方法，提高半导体设备之可靠度。半导体设备，具备：芯片焊垫6；SiC芯片1，搭载于芯片焊垫6；第1烧结Ag层16，将芯片焊垫6与SiC芯片1接合；以及补强树脂部17，覆盖第1烧结Ag层16的表面，且形成为填角状。更具有：源极导线9，与SiC芯片1之源极电极2电性连接；闸极导线，与闸极电极3电性连接；汲极导线，与汲极电极4电性连接；以及密封体14，覆盖SiC芯片1、第1烧结Ag层16及芯片焊垫6的一部分；补强树脂部17，覆盖SiC芯片1之侧面1c的一部分。

A semiconductor device includes a die pad (6), an SiC chip (1) mounted on the die pad (6), a porous first sintered Ag layer (16) bonding the die pad (6) and the SiC chip (1), and a reinforcing resin portion (17) covering a surface of the first sintered Ag layer (16) and formed in a fillet shape. The semiconductor device further includes a source lead (9) electrically connected to a source electrode of the SiC chip (1), a gate lead electrically connected to a gate electrode, a drain lead electrically connected to a drain electrode, and a sealing body (14) which covers the SiC chip (1), the first sintered Ag layer (16), and a part of the die pad (6), and the reinforcing resin (17) portion covers a part of a side surface (1c) of the SiC chip (1).