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公开(公告)号：TWI456707B
公开(公告)日：2014-10-11
申请号：TW097144949
申请日：2008-11-20
发明人： 谷藤雄一 , YATO, YUICHI , 中條卓也 , NAKAJO, TAKUYA , 岡浩偉 , OKA, HIROI
CPC分类号： H01L24/83 , H01L23/49513 , H01L23/49524 , H01L23/49562 , H01L23/49582 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/743 , H01L24/84 , H01L2224/04026 , H01L2224/274 , H01L2224/29101 , H01L2224/2919 , H01L2224/29339 , H01L2224/32245 , H01L2224/32506 , H01L2224/37124 , H01L2224/37147 , H01L2224/40091 , H01L2224/40245 , H01L2224/40247 , H01L2224/45014 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49111 , H01L2224/49175 , H01L2224/73219 , H01L2224/73221 , H01L2224/73265 , H01L2224/743 , H01L2224/83194 , H01L2224/83439 , H01L2224/83801 , H01L2224/83805 , H01L2224/8384 , H01L2224/8385 , H01L2224/83855 , H01L2224/85205 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/0781 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/30105 , H01L2924/00014 , H01L2924/00 , H01L2924/01026 , H01L2924/3512 , H01L2924/00015 , H01L2224/83205 , H01L2924/00012
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公开(公告)号：TWI596713B
公开(公告)日：2017-08-21
申请号：TW103105920
申请日：2014-02-21
发明人： 梶原良一 , KAJIWARA, RYOICHI , 中條卓也 , NAKAJO, TAKUYA , 新井克夫 , ARAI, KATSUO , 谷藤雄一 , YATO, YUICHI , 岡浩偉 , OKA, HIROI , 寶藏寺裕之 , HOZOJI, HIROSHI
IPC分类号： H01L23/12 , H01L23/488
CPC分类号： H01L23/49 , H01L21/50 , H01L23/293 , H01L23/295 , H01L23/3107 , H01L23/3192 , H01L23/49513 , H01L23/4952 , H01L23/49562 , H01L23/49582 , H01L23/562 , H01L23/564 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/92 , H01L29/1608 , H01L29/2003 , H01L2224/0381 , H01L2224/04042 , H01L2224/05073 , H01L2224/05082 , H01L2224/05155 , H01L2224/05166 , H01L2224/05552 , H01L2224/05553 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/0603 , H01L2224/291 , H01L2224/29111 , H01L2224/29118 , H01L2224/29139 , H01L2224/29144 , H01L2224/29294 , H01L2224/29439 , H01L2224/2949 , H01L2224/3011 , H01L2224/3201 , H01L2224/32013 , H01L2224/32058 , H01L2224/32059 , H01L2224/32245 , H01L2224/45124 , H01L2224/45139 , H01L2224/45147 , H01L2224/45155 , H01L2224/45565 , H01L2224/45616 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/48247 , H01L2224/48472 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48755 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48855 , H01L2224/48997 , H01L2224/4903 , H01L2224/49111 , H01L2224/73265 , H01L2224/83055 , H01L2224/83192 , H01L2224/83194 , H01L2224/83439 , H01L2224/83801 , H01L2224/8384 , H01L2224/8392 , H01L2224/83951 , H01L2224/85205 , H01L2224/85439 , H01L2224/85444 , H01L2224/85455 , H01L2224/8592 , H01L2224/85951 , H01L2224/92 , H01L2224/92247 , H01L2924/00011 , H01L2924/10272 , H01L2924/15747 , H01L2924/181 , H01L2924/3512 , H01L2924/00014 , H01L2924/06 , H01L2924/00012 , H01L2224/85 , H01L2224/83 , H01L2924/01013 , H01L2924/01051 , H01L2924/01047 , H01L2924/01029 , H01L2924/0105 , H01L2924/014 , H01L2924/00 , H01L2224/83205
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公开(公告)号：TW201703136A
公开(公告)日：2017-01-16
申请号：TW105109603
申请日：2016-03-28
发明人： 錦澤篤志 , NISHIKIZAWA, ATSUSHI , 谷藤雄一 , YATO, YUICHI , 岡浩偉 , OKA, HIROI , 團野忠敏 , DANNO, TADATOSHI , 中村弘幸 , NAKAMURA, HIROYUKI
IPC分类号： H01L21/31
CPC分类号： H01L23/49513 , H01L21/4825 , H01L21/565 , H01L23/3107 , H01L23/3114 , H01L23/4952 , H01L23/49562 , H01L23/49568 , H01L23/49575 , H01L24/06 , H01L2224/05554 , H01L2224/32245 , H01L2224/45144 , H01L2224/48137 , H01L2224/48247 , H01L2224/73265 , H01L2224/83192 , H01L2224/92247 , H01L2924/181 , H01L2924/00012 , H01L2924/00
摘要： 在樹脂封裝型的半導體裝置中，在導電性的晶片焊墊DP上，透過具有絶緣性的接合材料BD2搭載半導體晶片CP2，並透過具有導電性的接合材料BD1搭載半導體晶片CP1。半導體晶片CP2的第1側面與第2側面交叉所形成之第1邊被接合材料BD2所覆蓋之部分的第1長度，比半導體晶片CP1的第3側面與第4側面交叉所形成之第2邊被接合材料BD1所覆蓋之部分的第2長度更大。
简体摘要： 在树脂封装型的半导体设备中，在导电性的芯片焊垫DP上，透过具有绝缘性的接合材料BD2搭载半导体芯片CP2，并透过具有导电性的接合材料BD1搭载半导体芯片CP1。半导体芯片CP2的第1侧面与第2侧面交叉所形成之第1边被接合材料BD2所覆盖之部分的第1长度，比半导体芯片CP1的第3侧面与第4侧面交叉所形成之第2边被接合材料BD1所覆盖之部分的第2长度更大。
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公开(公告)号：TWI675418B
公开(公告)日：2019-10-21
申请号：TW105109603
申请日：2016-03-28
发明人： 錦澤篤志 , NISHIKIZAWA, ATSUSHI , 谷藤雄一 , YATO, YUICHI , 岡浩偉 , OKA, HIROI , 團野忠敏 , DANNO, TADATOSHI , 中村弘幸 , NAKAMURA, HIROYUKI
IPC分类号： H01L21/31
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公开(公告)号：TWI620283B
公开(公告)日：2018-04-01
申请号：TW103116430
申请日：2014-05-08
发明人： 谷藤雄一 , YATO, YUICHI , 岡浩偉 , OKA, HIROI , 奧西敕子 , OKUNISHI, NORIKO , 高田圭太 , TAKADA, KEITA
CPC分类号： H01L23/49513 , H01L21/565 , H01L23/13 , H01L23/16 , H01L23/24 , H01L23/3121 , H01L23/3142 , H01L23/4952 , H01L23/49524 , H01L23/49541 , H01L23/49548 , H01L23/49562 , H01L23/49582 , H01L23/49805 , H01L23/49844 , H01L23/562 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/743 , H01L24/77 , H01L2224/05624 , H01L2224/05644 , H01L2224/0603 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37147 , H01L2224/40091 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/45014 , H01L2224/45124 , H01L2224/45144 , H01L2224/48247 , H01L2224/48624 , H01L2224/48644 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/743 , H01L2224/83192 , H01L2224/83439 , H01L2224/8385 , H01L2224/83862 , H01L2224/84205 , H01L2224/84439 , H01L2224/8501 , H01L2224/85181 , H01L2224/85205 , H01L2224/85439 , H01L2224/92157 , H01L2224/92247 , H01L2924/00014 , H01L2924/1301 , H01L2924/13091 , H01L2924/15747 , H01L2924/181 , H01L2924/18301 , H01L2924/351 , H01L2924/00 , H01L2924/0665 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
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公开(公告)号：TW201503299A
公开(公告)日：2015-01-16
申请号：TW103116430
申请日：2014-05-08
发明人： 谷藤雄一 , YATO, YUICHI , 岡浩偉 , OKA, HIROI , 奧西敕子 , OKUNISHI, NORIKO , 高田圭太 , TAKADA, KEITA
CPC分类号： H01L23/49513 , H01L21/565 , H01L23/13 , H01L23/16 , H01L23/24 , H01L23/3121 , H01L23/3142 , H01L23/4952 , H01L23/49524 , H01L23/49541 , H01L23/49548 , H01L23/49562 , H01L23/49582 , H01L23/49805 , H01L23/49844 , H01L23/562 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/743 , H01L24/77 , H01L2224/05624 , H01L2224/05644 , H01L2224/0603 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37147 , H01L2224/40091 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/45014 , H01L2224/45124 , H01L2224/45144 , H01L2224/48247 , H01L2224/48624 , H01L2224/48644 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/743 , H01L2224/83192 , H01L2224/83439 , H01L2224/8385 , H01L2224/83862 , H01L2224/84205 , H01L2224/84439 , H01L2224/8501 , H01L2224/85181 , H01L2224/85205 , H01L2224/85439 , H01L2224/92157 , H01L2224/92247 , H01L2924/00014 , H01L2924/1301 , H01L2924/13091 , H01L2924/15747 , H01L2924/181 , H01L2924/18301 , H01L2924/351 , H01L2924/00 , H01L2924/0665 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： 本發明之一實施形態之半導體裝置係由樹脂密封搭載於晶片搭載部上之半導體晶片之半導體裝置，且於沿第1方向之上述半導體晶片之周緣部與上述晶片搭載部之周緣部之間的晶片搭載面側，固定有第1構件。又，上述第1構件被上述樹脂密封。又，於俯視下，上述第1方向上之上述晶片搭載部之上述第1部分之長度，長於上述第1方向上之上述半導體晶片之長度。
简体摘要： 本发明之一实施形态之半导体设备系由树脂密封搭载于芯片搭载部上之半导体芯片之半导体设备，且于沿第1方向之上述半导体芯片之周缘部与上述芯片搭载部之周缘部之间的芯片搭载面侧，固定有第1构件。又，上述第1构件被上述树脂密封。又，于俯视下，上述第1方向上之上述芯片搭载部之上述第1部分之长度，长于上述第1方向上之上述半导体芯片之长度。
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公开(公告)号：TW201444031A
公开(公告)日：2014-11-16
申请号：TW103105920
申请日：2014-02-21
发明人： 梶原良一 , KAJIWARA, RYOICHI , 中條卓也 , NAKAJO, TAKUYA , 新井克夫 , ARAI, KATSUO , 谷藤雄一 , YATO, YUICHI , 岡浩偉 , OKA, HIROI , 寶藏寺裕之 , HOZOJI, HIROSHI
IPC分类号： H01L23/12 , H01L23/488
CPC分类号： H01L23/49 , H01L21/50 , H01L23/293 , H01L23/295 , H01L23/3107 , H01L23/3192 , H01L23/49513 , H01L23/4952 , H01L23/49562 , H01L23/49582 , H01L23/562 , H01L23/564 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/92 , H01L29/1608 , H01L29/2003 , H01L2224/0381 , H01L2224/04042 , H01L2224/05073 , H01L2224/05082 , H01L2224/05155 , H01L2224/05166 , H01L2224/05552 , H01L2224/05553 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/0603 , H01L2224/291 , H01L2224/29111 , H01L2224/29118 , H01L2224/29139 , H01L2224/29144 , H01L2224/29294 , H01L2224/29439 , H01L2224/2949 , H01L2224/3011 , H01L2224/3201 , H01L2224/32013 , H01L2224/32058 , H01L2224/32059 , H01L2224/32245 , H01L2224/45124 , H01L2224/45139 , H01L2224/45147 , H01L2224/45155 , H01L2224/45565 , H01L2224/45616 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/48247 , H01L2224/48472 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48755 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48855 , H01L2224/48997 , H01L2224/4903 , H01L2224/49111 , H01L2224/73265 , H01L2224/83055 , H01L2224/83192 , H01L2224/83194 , H01L2224/83439 , H01L2224/83801 , H01L2224/8384 , H01L2224/8392 , H01L2224/83951 , H01L2224/85205 , H01L2224/85439 , H01L2224/85444 , H01L2224/85455 , H01L2224/8592 , H01L2224/85951 , H01L2224/92 , H01L2224/92247 , H01L2924/00011 , H01L2924/10272 , H01L2924/15747 , H01L2924/181 , H01L2924/3512 , H01L2924/00014 , H01L2924/06 , H01L2924/00012 , H01L2224/85 , H01L2224/83 , H01L2924/01013 , H01L2924/01051 , H01L2924/01047 , H01L2924/01029 , H01L2924/0105 , H01L2924/014 , H01L2924/00 , H01L2224/83205
摘要： 本發明提供一種半導體裝置及其製造方法，提高半導體裝置之可靠度。半導體裝置，具備：晶片焊墊6；SiC晶片1，搭載於晶片焊墊6；第1燒結Ag層16，將晶片焊墊6與SiC晶片1接合；以及補強樹脂部17，覆蓋第1燒結Ag層16的表面，且形成為填角狀。更具有：源極導線9，與SiC晶片1之源極電極2電性連接；閘極導線，與閘極電極3電性連接；汲極導線，與汲極電極4電性連接；以及密封體14，覆蓋SiC晶片1、第1燒結Ag層16及晶片焊墊6的一部分；補強樹脂部17，覆蓋SiC晶片1之側面1c的一部分。
简体摘要： 本发明提供一种半导体设备及其制造方法，提高半导体设备之可靠度。半导体设备，具备：芯片焊垫6；SiC芯片1，搭载于芯片焊垫6；第1烧结Ag层16，将芯片焊垫6与SiC芯片1接合；以及补强树脂部17，覆盖第1烧结Ag层16的表面，且形成为填角状。更具有：源极导线9，与SiC芯片1之源极电极2电性连接；闸极导线，与闸极电极3电性连接；汲极导线，与汲极电极4电性连接；以及密封体14，覆盖SiC芯片1、第1烧结Ag层16及芯片焊垫6的一部分；补强树脂部17，覆盖SiC芯片1之侧面1c的一部分。
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公开(公告)号：TW201142960A
公开(公告)日：2011-12-01
申请号：TW100104978
申请日：2011-02-15
申请人： 瑞薩電子股份有限公司
IPC分类号： H01L
CPC分类号： H01L24/73 , H01L23/3107 , H01L23/49513 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L24/05 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/743 , H01L24/83 , H01L24/84 , H01L24/85 , H01L24/92 , H01L25/0657 , H01L2224/03436 , H01L2224/04026 , H01L2224/04034 , H01L2224/04042 , H01L2224/05082 , H01L2224/05083 , H01L2224/05155 , H01L2224/05166 , H01L2224/05553 , H01L2224/05554 , H01L2224/05624 , H01L2224/05644 , H01L2224/0603 , H01L2224/06181 , H01L2224/2612 , H01L2224/26175 , H01L2224/27013 , H01L2224/29 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/29139 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/29386 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/37124 , H01L2224/37147 , H01L2224/40091 , H01L2224/40132 , H01L2224/40245 , H01L2224/40247 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48599 , H01L2224/48624 , H01L2224/48644 , H01L2224/49111 , H01L2224/49175 , H01L2224/49433 , H01L2224/73219 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/743 , H01L2224/83051 , H01L2224/83192 , H01L2224/838 , H01L2224/83801 , H01L2224/8385 , H01L2224/84205 , H01L2224/85205 , H01L2224/92157 , H01L2224/92166 , H01L2224/92247 , H01L2225/0651 , H01L2225/06568 , H01L2924/0132 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/01022 , H01L2924/01074 , H01L2924/01026 , H01L2924/01028 , H01L2924/0105 , H01L2924/01029 , H01L2924/01047 , H01L2924/0103 , H01L2924/01083 , H01L2924/01049 , H01L2924/01082 , H01L2924/00012 , H01L2924/00011 , H01L2924/05442
摘要： 本發明之半導體裝置中,於向配線板之晶片搭載部上塗佈晶片接合材之步驟中所使用之衝壓噴嘴(42)之下面,設置有填充晶片接合材之凹入部(50)。凹入部(50)之平面尺寸較搭載於晶片搭載部上之晶片之外形尺寸更小。又,凹入部(50)之深度較上述晶片之厚度更小。於上述晶片之厚度為100 ���m以下之情形時,藉由使用上述衝壓噴嘴(42)向晶片搭載部上塗佈晶片接合材,可避免晶片接合材漫延至上述晶片之上面之不良情形。
简体摘要： 本发明之半导体设备中,于向配线板之芯片搭载部上涂布芯片接合材之步骤中所使用之冲压喷嘴(42)之下面,设置有填充芯片接合材之凹入部(50)。凹入部(50)之平面尺寸较搭载于芯片搭载部上之芯片之外形尺寸更小。又,凹入部(50)之深度较上述芯片之厚度更小。于上述芯片之厚度为100 ���m以下之情形时,借由使用上述冲压喷嘴(42)向芯片搭载部上涂布芯片接合材,可避免芯片接合材漫延至上述芯片之上面之不良情形。
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