本发明提供一种可防止半导体设备最上层之保护膜之裂痕，以谋求半导体设备之可靠性之提高之技术。将半导体芯片之主面上所形成之接合焊垫BP1设为长方形状，并以使接合焊垫BP1之打线接合区域BP1w中之保护膜5之重叠宽度宽于接合焊垫BP1之探针区域BP1p中之保护膜5之重叠宽度之方式，而于接合焊垫BP1上之保护膜5上形成开口部6。

A technique is provided that can prevent cracking of a protective film in the uppermost layer of a semiconductor device and improve the reliability of the semiconductor device. Bonding pads formed over a principal surface of a semiconductor chip are in a rectangular shape, and an opening is formed in a protective film over each bonding pad in such a manner that an overlapping width of the protective film in a wire bonding region of each bonding pad becomes wider than an overlapping width of the protective film in a probe region of each bonding pad.