本发明涉及一种用于制备超级接面结构的方法，尤其涉及一种用于制备横向超级接面结构的方法；一种在半导体组件中制备横向超级接面结构的制备方法，使用N和P型离子注入到基极外延层中。在一些实施例中，基极外延层为本征外延层或轻掺杂外延层。该方法同时将N和P型离子注入到基极外延层中。连续重复进行外延和注入工艺，在半导体基极层上制备多个注入的基极外延层。形成所需数量的注入基极外延层之后，对半导体结构退火，形成含有交替N和P型薄半导体区的横向超级接面结构。确切地说，通过离子注入工艺和后续的退火，制成交替的N和P型薄超级接面层。本发明所述的制备方法，确保在横向超级接面组件中实现良好的电荷控制。

The present invention relates to a method for forming super-junction structure, more particularly, to a method for forming lateral super-junction structure; A fabrication method to form a lateral superjunction structure in a semiconductor device uses N and P type ion implantations into a base epitaxial layer. In some embodiments, the base epitaxial layer is an intrinsic epitaxial layer or a lightly doped epitaxial layer. The method performs simultaneous N and P type ion implantations into the base epitaxial layer. The epitaxial and implantation processes are repeated successively to form multiple implanted base epitaxial layers on a semiconductor base layer. After the desired number of implanted base epitaxial layers is formed, the semiconductor structure is subjected to annealing to form a lateral superjunction structure including alternate N and P type thin semiconductor regions. In particular, the alternating N and P type thin superjunction layers are formed by the ion implantation process and subsequent annealing. The fabrication method of the present invention ensures good charge control in the lateral superjunction structure.