所述III族氮化物(III-Nitride或III-N)组件具有III-N材料层、位于III-N材料层表面之绝缘层、位于远离III-N材料层的绝缘层对侧之蚀刻终止层、以及位于远离绝缘层、远离蚀刻终止层的蚀刻终止层对侧之电极定义层。在该电极定义层中形成凹部。在该凹部中形成电极。特别是在电极与III-N材料层间的绝缘层可具有精确控制的厚度。

A III-N device is described with a III-N material layer, an insulator layer on a surface of the III-N material layer, an etch stop layer on an opposite side of the insulator layer from the III-N material layer, and an electrode defining layer on an opposite side of the etch stop layer from the etch stop layer from the insulator layer. A recess is formed in the electrode defining layer. An electrode is formed in the recess. The insulator can have a precisely controlled thickness, particularly between the electrode and III-N material layer.