单晶鳍式场效应管包括设置于一第二III-V族化合物半导体上之一第一III-V族化合物半导体材料中之大多数载子信道。当例如一牺牲闸极堆栈之一遮罩覆盖该信道区域时，一两性掺杂物之一来源系被沉积于暴露的鳍片侧壁上方且扩散至该第一III-V族化合物半导体材料。该两性掺杂物优先地启动作为于该第一III-V族材料内之一施体及于该第二III-V族材料内之一受体，提供晶体管尖端掺杂一p-n接面于该第一与第二III-V族材料间。一侧向间隔件系被沉积以覆盖该鳍片之该尖端部份。于该鳍片未由该遮罩或间隔件所覆盖之区域中的源极/汲极区域透过该尖端区域电性地耦接至该信道。该信道遮罩系以一闸极堆栈取代。

Monolithic finFETs including a majority carrier channel in a first III-V compound semiconductor material disposed on a second III-V compound semiconductor. While a mask, such as a sacrificial gate stack, is covering the channel region, a source of an amphoteric dopant is deposited over exposed fin sidewalls and diffused into the first III-V compound semiconductor material. The amphoteric dopant preferentially activates as a donor within the first III-V material and an acceptor with the second III-V material, providing transistor tip doping with a p-n junction between the first and second III-V materials. A lateral spacer is deposited to cover the tip portion of the fin. Source/drain regions in regions of the fin not covered by the mask or spacer electrically couple to the channel through the tip region. The channel mask is replaced with a gate stack.