本发明涉及一种金氧半场效应管(MOSFET)组件及端接结构，尤其涉及一种横向超级接面金氧半场效应管组件及端接结构；一种横向超级接面金氧半场效应管组件包括一个闸极结构、一个连接到横向超级接面结构的第一立柱以及一个紧靠第一立柱的第二立柱。该横向超级接面金氧半场效应管组件包括第一立柱，当金氧半场效应管接通时接收来自信道的电流，并将电流分配至横向超级接面结构，用作汲极漂流区。位于第一立柱附近的第二立柱用于当金氧半场效应管组件断开时，夹断第一立柱，防止金氧半场效应管组件在汲极端承受的高电压接触闸极结构。在一些实施例中，横向超级接面金氧半场效应管组件还包括用于汲极、源极以及本体接触掺杂区梳的端接结构。

The present invention relates to a super-junction MOSFET device and termination structure, more particularly, to a Lateral super-junction MOSFET device and termination structure; A lateral super-junction MOSFET device includes a gate structure, a first column connected to the lateral super-junction structure and a second column disposed in close proximity to the first column. The lateral super-junction MOSFET device includes the first column to receive current from the channel when the MOSFET is turned on and to distribute the channel current to the lateral super-junction structure functioning as the drain drift region. The second column disposed near the first column is used to pinch off the first column when the MOSFET device is to be turned off and to block the high voltage being sustained by the MOSFET device at the drain terminal from reaching the gate structure. In some embodiments, the lateral super-junction MOSFET device further includes termination structures for the drain, some and body contact doped region fingers.