本发明是有关于一种集成电路（IC）及其形成方法，所述集成电路包括高介电值（high-k）金属闸极（HKMG）非挥发性内存（NVM）设备并提供小尺寸及高性能。在一些实施例中，集成电路包括具有在基底之上横向地间隔开的选择晶体管与控制晶体管的内存区。选择闸极及控制闸极安置于高介电值闸介电层及内存闸氧化物之上。逻辑区邻近所述内存区安置且具有逻辑设备，所述逻辑设备包括安置于高介电值闸介电层及逻辑门氧化物之上的金属闸极。选择闸极及控制闸极可为多晶硅电极。

The present disclosure relates to an integrated circuit (IC) that includes a high-k metal gate (HKMG) non-volatile memory (NVM) device and that provides small scale and high performance, and a method of forming the same. In some embodiments, the integrated circuit includes a memory region having a select transistor and a control transistor laterally spaced apart over a substrate. A select gate electrode and a control gate electrode are disposed over a high-k gate dielectric layer and a memory gate oxide. A logic region is disposed adjacent to the memory region and has a logic device including a metal gate electrode disposed over the high-k gate dielectric layer and a logic gate oxide. The select gate electrode and the control gate electrode can be polysilicon electrodes.