根据本发明之一半导体设备包含：一穿通导通体，其经形成以穿透一半导体基板；第一及第二缓冲器电路；一布线形成层，其形成于该半导体基板之一上部层中；一连接布线部分，假定自该半导体基板至该布线形成层之一方向系一向上方向，则该连接布线部分系形成于该穿通导通体之一上部部分中，形成于面向该穿通导通体之一端面处之该半导体基板之上部部分之一芯片内端面上；一第一路径，其连接该第一缓冲器电路与该穿通导通体；及一第二路径，其连接该第二缓冲器电路与该穿通导通体。该第一路径及该第二路径透过该连接布线部分而电连接。

A semiconductor device according to the present invention includes: a through via formed to penetrate a semiconductor substrate; first and second buffer circuits; a wiring forming layer formed in an upper layer of the semiconductor substrate; a connecting wiring portion formed in an upper portion of the through via assuming that a direction from the semiconductor substrate to the wiring forming layer is an upward direction, the connecting wiring portion being formed on a chip inner end face that faces the upper portion of the semiconductor substrate at an end face of the through via; a first path connecting the first buffer circuit and the through via; and a second path connecting the second buffer circuit and the through via. The first path and the second path are electrically connected through the connecting wiring portion.