Invention Grant
- Patent Title: Low-offset Graphene Hall sensor
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Application No.: US14936631Application Date: 2015-11-09
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Publication No.: US10001529B2Publication Date: 2018-06-19
- Inventor: Arup Polley , Archana Venugopal , Luigi Colombo , Robert R. Doering
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Michael A. Davis, Jr.; Charles A. Brill; Frank D. Cimino
- Main IPC: G01R33/07
- IPC: G01R33/07 ; H01L43/04 ; H01L43/06 ; H01L43/10 ; G01R33/00

Abstract:
A Graphene Hall sensor (GHS) is provided with a modulated gate bias signal in which the modulated gate bias signal alternates at a modulation frequency between a first voltage that produces a first conductivity state in the GHS and a second voltage that produces approximately a same second conductivity state in the GHS. A bias current is provided through a first axis of the GHS. A resultant output voltage signal is provided across a second axis of the Hall sensor that includes a modulated Hall voltage and an offset voltage, in which the Hall voltage is modulated at the modulation frequency. An amplitude of the Hall voltage that does not include the offset voltage is extracted from the resultant output voltage signal.
Public/Granted literature
- US20170067970A1 Low-Offset Graphene Hall Sensor Public/Granted day:2017-03-09
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