- 专利标题: Semiconductor device
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申请号: US14602729申请日: 2015-01-22
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公开(公告)号: US10002934B2公开(公告)日: 2018-06-19
- 发明人: Fujio Masuoka , Nozomu Harada , Hiroki Nakamura
- 申请人: UNISANTIS ELECTRONICS SINGAPORE PTE. LTD.
- 申请人地址: SG Singapore
- 专利权人: Unisantis Electronics Singapore Pte. Ltd.
- 当前专利权人: Unisantis Electronics Singapore Pte. Ltd.
- 当前专利权人地址: SG Singapore
- 代理商 Laurence Greenberg; Werner Stemer; Ralph Locher
- 主分类号: H01L27/12
- IPC分类号: H01L27/12 ; H01L29/06 ; H01L29/16 ; H01L29/423 ; H01L27/092 ; H01L21/8238 ; H01L27/11 ; H01L29/78 ; H01L29/08 ; H01L27/02
摘要:
A semiconductor device includes a first planar semiconductor (e.g., silicon) layer, first and second pillar-shaped semiconductor (e.g., silicon) layers, a first gate insulating film, a first gate electrode, a second gate insulating film, a second gate electrode, a first gate line connected to the first and second gate electrodes, a first n-type diffusion layer, a second n-type diffusion layer, a first p-type diffusion layer, and a second p-type diffusion layer. A center line extending along the first gate line is offset by a first predetermined amount from a line connecting a center of the first pillar-shaped semiconductor layer and a center of the second pillar-shaped semiconductor layer.
公开/授权文献
- US20150145051A1 SEMICONDUCTOR DEVICE 公开/授权日:2015-05-28