A method for measuring and/or acquiring layer thicknesses and voids of one or more layers of a temporary bonded wafer stack on a plurality of measuring points is provided. A sequence of the method includes an arrangement of a measurement means for measuring and/or acquiring the layer thicknesses and voids of the layers of the wafer stack at the measuring points relative to a flat side of the wafer stack. The sequence further includes an emission of signals in the form of electromagnetic waves by a transmitter of the measurement means, and a receiving the signals which have been reflected by the wafer stack by a receiver of the measurement means. The sequence also includes an evaluation of the signals which have been received by the receiver by an evaluation unit.