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公开(公告)号:US11756818B2
公开(公告)日:2023-09-12
申请号:US17735239
申请日:2022-05-03
IPC分类号: H01L21/68 , H01L21/683 , H01L21/67 , H01L21/66
CPC分类号: H01L21/68 , H01L21/67288 , H01L21/683 , H01L21/67092 , H01L22/12
摘要: A receiving means for receiving and mounting of wafers, comprised of a mounting surface, mounting means for mounting a wafer onto the mounting surface and compensation means for active, locally controllable, compensation of local and/or global distortions of the wafer.
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公开(公告)号:US20220216098A1
公开(公告)日:2022-07-07
申请号:US17693812
申请日:2022-03-14
发明人: Markus Wimplinger
IPC分类号: H01L21/762 , H01L21/20 , C23C14/48
摘要: A method for surface treatment of an at least primarily crystalline substrate surface of a substrate such that by amorphization of the substrate surface, an amorphous layer is formed at the substrate surface with a thickness d>0 nm of the amorphous layer. This invention also relates to a corresponding device for surface treatment of substrates.
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公开(公告)号:US11348825B2
公开(公告)日:2022-05-31
申请号:US17007082
申请日:2020-08-31
发明人: Markus Wimplinger
IPC分类号: C23C14/48 , H01L21/762 , H01L21/20
摘要: A method for surface treatment of an at least primarily crystalline substrate surface of a substrate such that by amorphization of the substrate surface, an amorphous layer is formed at the substrate surface with a thickness d>0 nm of the amorphous layer. This invention also relates to a corresponding device for surface treatment of substrates.
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公开(公告)号:US11020953B2
公开(公告)日:2021-06-01
申请号:US16359157
申请日:2019-03-20
IPC分类号: B32B38/18 , H01L21/18 , B32B37/00 , B32B37/18 , B32B37/10 , B29C65/78 , H01L21/67 , H01L21/683 , B29C65/00
摘要: A method for bonding a contact surface of a first substrate to a contact surface of a second substrate comprising of the steps of: positioning the first substrate on a first receiving surface of a first receiving apparatus and positioning the second substrate on a second receiving surface of a second receiving apparatus; establishing contact of the contact surfaces at a bond initiation site; and bonding the first substrate to the second substrate along a bonding wave which is travelling from the bond initiation site to the side edges of the substrates, wherein the first substrate and/or the second substrate is/are deformed for alignment of the contact surfaces.
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公开(公告)号:US11020952B2
公开(公告)日:2021-06-01
申请号:US16358844
申请日:2019-03-20
IPC分类号: B32B38/18 , H01L21/18 , B32B37/00 , B32B37/18 , B32B37/10 , B29C65/78 , H01L21/67 , H01L21/683 , B29C65/00
摘要: A method for bonding a contact surface of a first substrate to a contact surface of a second substrate comprising of the steps of: positioning the first substrate on a first receiving surface of a first receiving apparatus and positioning the second substrate on a second receiving surface of a second receiving apparatus; establishing contact of the contact surfaces at a bond initiation site; and bonding the first substrate to the second substrate along a bonding wave which is travelling from the bond initiation site to the side edges of the substrates, wherein the first substrate and/or the second substrate is/are deformed for alignment of the contact surfaces.
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公开(公告)号:US11020950B2
公开(公告)日:2021-06-01
申请号:US16357729
申请日:2019-03-19
IPC分类号: B32B38/18 , H01L21/18 , B32B37/00 , B32B37/18 , B32B37/10 , B29C65/78 , H01L21/67 , H01L21/683 , B29C65/00
摘要: A method for bonding a contact surface of a first substrate to a contact surface of a second substrate comprising of the steps of: positioning the first substrate on a first receiving surface of a first receiving apparatus and positioning the second substrate on a second receiving surface of a second receiving apparatus; establishing contact of the contact surfaces at a bond initiation site; and bonding the first substrate to the second substrate along a bonding wave which is travelling from the bond initiation site to the side edges of the substrates, wherein the first substrate and/or the second substrate is/are deformed for alignment of the contact surfaces.
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公开(公告)号:US10886156B2
公开(公告)日:2021-01-05
申请号:US16283889
申请日:2019-02-25
IPC分类号: H01L21/68 , H01L21/67 , H01L21/683 , H01L21/66
摘要: A receiving means for receiving and mounting of wafers, comprised of a mounting surface, mounting means for mounting a wafer onto the mounting surface and compensation means for active, locally controllable, compensation of local and/or global distortions of the wafer.
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公开(公告)号:US10438925B2
公开(公告)日:2019-10-08
申请号:US15875335
申请日:2018-01-19
发明人: Markus Wimplinger
摘要: A method for applying a bonding layer that is comprised of a basic layer and a protective layer on a substrate with the following method steps: application of an oxidizable basic material as a basic layer on a bonding side of the substrate, at least partial covering of the basic layer with a protective material that is at least partially dissolvable in the basic material as a protective layer. In addition, the invention relates to a corresponding substrate.
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公开(公告)号:US20190206711A1
公开(公告)日:2019-07-04
申请号:US16283889
申请日:2019-02-25
IPC分类号: H01L21/68 , H01L21/67 , H01L21/683
CPC分类号: H01L21/68 , H01L21/67092 , H01L21/67288 , H01L21/683 , H01L22/12
摘要: A receiving means for receiving and mounting of wafers, comprised of a mounting surface, mounting means for mounting a wafer onto the mounting surface and compensation means for active, locally controllable, compensation of local and/or global distortions of the wafer.
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公开(公告)号:US09627349B2
公开(公告)日:2017-04-18
申请号:US14909157
申请日:2013-09-13
发明人: Markus Wimplinger
CPC分类号: H01L24/83 , B81C3/001 , B81C2203/036 , H01L24/29 , H01L24/32 , H01L2224/29082 , H01L2224/291 , H01L2224/29105 , H01L2224/29111 , H01L2224/29116 , H01L2224/29117 , H01L2224/29118 , H01L2224/29123 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29157 , H01L2224/2916 , H01L2224/29166 , H01L2224/29169 , H01L2224/29171 , H01L2224/29184 , H01L2224/32145 , H01L2224/32507 , H01L2224/8302 , H01L2224/83022 , H01L2224/8381 , H01L2224/83894 , H01L2924/01003 , H01L2924/01005 , H01L2924/01011 , H01L2924/01012 , H01L2924/01019 , H01L2924/0102 , H01L2924/01034 , H01L2924/01037 , H01L2924/01038 , H01L2924/0105 , H01L2924/01052 , H01L2924/01055 , H01L2924/01056 , H01L2924/01322 , H01L2924/10251 , H01L2924/10252 , H01L2924/10253 , H01L2924/1026 , H01L2924/10271 , H01L2924/10272 , H01L2924/10323 , H01L2924/10328 , H01L2924/10329 , H01L2924/1033 , H01L2924/10331 , H01L2924/10332 , H01L2924/10333 , H01L2924/10334 , H01L2924/10335 , H01L2924/10336 , H01L2924/10346 , H01L2924/1037 , H01L2924/10371 , H01L2924/10372 , H01L2924/10373 , H01L2924/10375 , H01L2924/10376 , H01L2924/10377 , H01L2924/10821 , H01L2924/10823 , H01L2924/10831 , H01L2924/00 , H01L2924/00014 , H01L2924/01032 , H01L2924/01013 , H01L2924/01031 , H01L2924/0103
摘要: A method for applying a bonding layer that is comprised of a basic layer and a protective layer on a substrate with the following method steps: application of an oxidizable basic material as a basic layer on a bonding side of the substrate, at least partial covering of the basic layer with a protective material that is at least partially dissolvable in the basic material as a protective layer. In addition, the invention relates to a corresponding substrate.
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