Invention Grant
- Patent Title: Devices including memory arrays, row decoder circuitries and column decoder circuitries
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Application No.: US15615652Application Date: 2017-06-06
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Publication No.: US10014057B2Publication Date: 2018-07-03
- Inventor: Toru Tanzawa
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: G11C16/08
- IPC: G11C16/08 ; G11C5/02 ; G11C16/04 ; G11C8/10

Abstract:
Some embodiments include a device having an array of memory cells, a memory control unit at least partially under the array, row decoder circuitry in data communication with the memory control unit, and column decoder circuitry in data communication with the memory control unit. Some embodiments include a device having an array of memory cells, row decoder circuitry and column decoder circuitry. One of the row and column decoder circuitries is within a unit that extends at least partially under the array of memory cells and the other within a unit that is laterally outward of the array of memory cells.
Public/Granted literature
- US20170278572A1 Devices Including Memory Arrays, Row Decoder Circuitries and Column Decoder Circuitries Public/Granted day:2017-09-28
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