Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US15145231Application Date: 2016-05-03
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Publication No.: US10014267B2Publication Date: 2018-07-03
- Inventor: Yong-Sang Cho , Sang-Woo Pae , Hyun-Suk Chun , Young-Seok Jung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2015-0083148 20150612
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/58 ; H01L23/31 ; H01L23/525

Abstract:
A semiconductor device comprises a semiconductor chip which includes at least one gate structure on a substrate, the gate structure including a first region, a second region different from the first region, and a third region between the first and the second region, a first redistribution layer on a top surface of the semiconductor chip, the first redistribution layer configured to electrically connect a first electrode pad of the semiconductor chip to a first solder ball and overlap the first region of the gate structure, a second redistribution layer on the top surface of the semiconductor chip, the second redistribution layer configured to electrically connect a second electrode pad of the semiconductor chip to a second solder ball and overlap the second region of the gate structure such that the third region is exposed, and an insulating layer on the first redistribution layer and the second redistribution layer.
Public/Granted literature
- US20160365326A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-12-15
Information query
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