A semiconductor device includes a semiconductor substrate. A first semiconductor region is over a portion of the semiconductor substrate to a first depth. A second semiconductor region is in the first semiconductor region. A third semiconductor region is in the first semiconductor region. A fourth semiconductor region is outside the first semiconductor region. A fifth semiconductor region is outside the first semiconductor region to a fifth depth, the fifth semiconductor region being adjacent the fourth semiconductor region. A sixth semiconductor region is below the fifth semiconductor region and to a sixth depth. The sixth depth is equal to the first depth. A first electrode is connected to the third semiconductor region. A second electrode is connected to the fourth and fifth semiconductor regions. The fifth semiconductor region is configured to cause an increase in a current during a cathode to anode positive bias operation between the first and second electrodes.