A method for fabricating a field effect transistor device comprises forming a fin on a substrate, forming a first dummy gate stack and a second dummy gate stack over the fin, forming spacers adjacent to the fin, the first dummy gate stack, and the second dummy gate stack, etching to remove portions of the fin and form a first cavity partially defined by the spacers, depositing an insulator material in the first cavity, patterning a mask over the first dummy gate stack and portions of the fin, etching to remove exposed portions of the insulator material, and epitaxially growing a first semiconductor material on exposed portions of the fin.