- Patent Title: Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon
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Application No.: US15295577Application Date: 2016-10-17
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Publication No.: US10014311B2Publication Date: 2018-07-03
- Inventor: Dimitrios Pavlopoulos , Kunal Shrotri , Anish A. Khandekar
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L27/11568
- IPC: H01L27/11568 ; H01L27/11519 ; H01L27/11565 ; H01L27/11521 ; H01L27/11556 ; H01L27/11582 ; H01L29/792 ; H01L29/788 ; H01L29/66
Abstract:
A method of forming poly silicon comprises forming a first polysilicon-comprising material over a substrate, with the first polysilicon-comprising material comprising at least one of elemental carbon and elemental nitrogen at a total of 0.1 to 20 atomic percent. A second polysilicon-comprising material is formed over the first poly silicon-comprising material. The second polysilicon-comprising material comprises less, if any, total elemental carbon and elemental nitrogen than the first polysilicon-comprising material. Other aspects and embodiments, including structure independent of method of manufacture, are disclosed.
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