Invention Grant
- Patent Title: Bipolar transistor device and method of fabrication
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Application No.: US15494868Application Date: 2017-04-24
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Publication No.: US10014398B2Publication Date: 2018-07-03
- Inventor: Johannes Donkers , Viet Thanh Dinh , Tony Vanhoucke , Evelyne Gridelet , Anco Heringa , Dirk Klaassen
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP14159267 20140312
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/737 ; H01L29/06 ; H01L29/40
Abstract:
The disclosure relates to bipolar transistor devices and a method of fabricating the same. The device comprises a field plate, in an isolation region adjacent to a base-collector junction of said active region. The isolation region comprises a gate terminal arranged to be biased independently of a collector, base or emitter terminal of said transistor.
Public/Granted literature
- US20170229564A1 BIPOLAR TRANSISTOR DEVICE AND METHOD OF FABRICATION Public/Granted day:2017-08-10
Information query
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