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公开(公告)号：US10043894B2
公开(公告)日：2018-08-07
申请号：US14542990
申请日：2014-11-17
Applicant: NXP B.V.
Inventor： Viet Thanh Dinh , Tony Vanhoucke , Evelyne Gridelet , Anco Heringa , Jan Willem Slotboom , Dirk Klaassen
IPC: H01L29/737 , H01L29/06 , H01L29/735 , H01L29/78 , H01L29/165
Abstract: Disclosed is a transistor having a first region of a first conductivity type for injecting charge carriers into the transistor and a laterally extended second region of the first conductivity type having a portion including a contact terminal for draining said charge carriers from the transistor, wherein the first region is separated from the second region by an intermediate region of a second conductivity type defining a first p-n junction with the first region and a second p-n junction with the second region, wherein the laterally extended region separates the portion from the second p-n junction, and wherein the transistor further comprises a substrate having a doped region of the second conductivity type, said doped region being in contact with and extending along the laterally extended second region and a further contact terminal connected to the doped region for draining minority charge carriers from the laterally extended second region. An amplifier circuit and IC including such transistors are also disclosed.
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公开(公告)号：US20140312356A1
公开(公告)日：2014-10-23
申请号：US14223296
申请日：2014-03-24
Applicant: NXP B.V.
Inventor： Tony Vanhoucke , Viet Thanh Dinh , Anco Heringa , Dirk Claasen , Evelyne Gridelet , Jan Willem Slotboom
IPC: H01L29/737 , H01L29/739 , H01L29/66
CPC classification number: H01L29/737 , H01L29/0649 , H01L29/0692 , H01L29/0821 , H01L29/1004 , H01L29/205 , H01L29/402 , H01L29/407 , H01L29/66242 , H01L29/6628 , H01L29/7327 , H01L29/739
Abstract: A semiconductor device and a method of making the same. The device includes a semiconductor substrate. The device also includes a bipolar transistor on the semiconductor substrate. The bipolar transistor includes an emitter. The bipolar transistor also includes a base located above the emitter. The bipolar transistor further includes a laterally extending collector located above the base. The collector includes a portion that extends past an edge of the base.
Abstract translation: 半导体器件及其制造方法。 该器件包括半导体衬底。 该器件还包括半导体衬底上的双极晶体管。 双极晶体管包括发射极。 双极晶体管还包括位于发射极之上的基极。 双极晶体管还包括位于基极上方的横向延伸的收集器。 收集器包括延伸经过基座边缘的部分。
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公开(公告)号：US09666667B2
公开(公告)日：2017-05-30
申请号：US14714124
申请日：2015-05-15
Applicant: NXP B.V.
Inventor： Peter Steeneken , Anco Heringa , Radu Surdeanu , Luc Van Dijk , Hendrik Johannes Bergveld
IPC: H02M7/537 , H01L29/06 , H01L29/417 , H02M5/00 , H02M3/00 , H03K17/687 , H01L29/423
CPC classification number: H01L29/0634 , H01L29/0649 , H01L29/41758 , H01L29/42356 , H01L29/4238 , H02M3/00 , H02M5/00 , H02M7/537 , H03K17/687
Abstract: Aspects of the present disclosure are directed toward apparatuses, methods, and systems that include at least two regions of a first semiconductor material and at least two regions of second semiconductor material that are alternatively interleaved. Additionally, the apparatuses, methods, and systems include a first electrode and a second electrode that can operate both as a source and drain. The apparatuses, methods, and systems also include a first gate electrode having multiple portions on the first semiconductor material and a second gate electrode having multiple portions on the second semiconductor material that bidirectionally control current flow between the first electrode and the second electrode.
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公开(公告)号：US09666598B2
公开(公告)日：2017-05-30
申请号：US14500889
申请日：2014-09-29
Applicant: NXP B.V.
Inventor： Liang Yan , Roel Daamen , Anco Heringa , Erwin Hijzen
CPC classification number: H01L27/1203 , H01L23/3677 , H01L27/0211 , H01L29/0653 , H01L29/0696 , H01L29/7824 , H01L2924/0002 , H05K7/20 , H01L2924/00
Abstract: An integrated heat sink array is introduced in SOI power devices having multiple unit cells, which can be used to reduce the temperature rise in obtaining more uniform temperature peaks for all the unit cells across the device area, so that the hot spot which is prone to breakdown can be avoided, thus the safe operating area of the device can be improved. Also the array sacrifice less area of the device, therefore results in low Rdson.
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5.发明授权公开(公告)号：US09515644B2
公开(公告)日：2016-12-06
申请号：US14286418
申请日：2014-05-23
Applicant: NXP B.V.
Inventor： Viet Thanh Dinh , Godefridus Antonius Maria Hurxk , Tony Vanhoucke , Jan Willem Slotboom , Anco Heringa , Ivan Zahariev , Evelyne Gridelet
IPC: H03F1/34 , H03K17/10 , H01L29/40 , H01L29/732 , H01L29/165 , H01L29/737 , H03F3/19 , H03F3/21 , G05F1/46
CPC classification number: H03K17/10 , G05F1/462 , H01L29/165 , H01L29/402 , H01L29/7327 , H01L29/737 , H03F1/34 , H03F3/19 , H03F3/21 , H03F2200/153
Abstract: A circuit, comprising a semiconductor device with one or more field gate terminals for controlling the electric field in a drift region of the semiconductor device; and a feedback circuit configured to dynamically control a bias voltage or voltages applied to the field gate terminal or terminals, with different control voltages used for different semiconductor device characteristics in real-time in response to a time-varying signal at a further node in the circuit.
Abstract translation: 一种电路，包括具有一个或多个场栅极端子的半导体器件，用于控制半导体器件的漂移区域中的电场; 以及反馈电路，被配置为响应于在另一个节点处的时变信号，动态地控制施加到场门极端子的偏置电压或电压，其具有用于不同半导体器件特性的不同控制电压 电路。
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Patent Agency Ranking
公开(公告)号：US09508693B2
公开(公告)日：2016-11-29
申请号：US14500840
申请日：2014-09-29
Applicant: NXP B.V.
Inventor： Liang Yan , Roel Daamen , Anco Heringa , Erwin Hijzen
CPC classification number: H01L25/072 , H01L23/3677 , H01L27/0211 , H01L27/1203 , H01L29/0653 , H01L29/0696 , H01L29/7824 , H01L2924/0002 , H01L2924/00
Abstract: An integrated heat sink array is introduced in SOI power devices having multiple unit cells, which can be used to reduce the temperature rise in obtaining more uniform temperature peaks for all the unit cells across the device area, so that the hot spot which is prone to breakdown can be avoided, thus the safe operating area of the device can be improved. Also the array sacrifice less area of the device, therefore results in low Rdson.
Abstract translation: 在具有多个单元电池的SOI功率器件中引入了集成散热器阵列，其可以用于降低温度上升，从而在器件区域上的所有单元电池获得更均匀的温度峰值，使得易于 可以避免故障，从而可以提高设备的安全工作面积。 此外，阵列牺牲了较少的器件面积，因此导致低Rdson。
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公开(公告)号：US09368963B2
公开(公告)日：2016-06-14
申请号：US14072122
申请日：2013-11-05
Applicant: NXP B.V.
Inventor： Klaus Reimann , Hans-Martin Ritter , Wolfgang Schnitt , Anco Heringa
CPC classification number: H02H9/046 , H01L27/0255
Abstract: An ESD protection circuit comprises a series connection of at least two protection components between a signal line to be protected and a return line (e.g. ground), comprising a first protection component connected to the signal line and a second protection component connected to the ground line. They are connected with opposite polarity so that when one conducts in forward direction the other conducts in reverse breakdown mode. A bias voltage source connects to the junction between the two protection components through a bias impedance. The use of the bias voltage enables the signal distortions resulting from the ESD protection circuit to be reduced.
Abstract translation: ESD保护电路包括在待保护的信号线和返回线（例如接地）之间的至少两个保护部件的串联连接，包括连接到信号线的第一保护部件和连接到接地线的第二保护部件 。 它们以相反的极性连接，使得当一个正向导通时，另一个导通反向击穿模式。 偏置电压源通过偏置阻抗连接到两个保护元件之间的接点。 使用偏置电压可以降低由ESD保护电路产生的信号失真。
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公开(公告)号：US09240468B2
公开(公告)日：2016-01-19
申请号：US14223296
申请日：2014-03-24
Applicant: NXP B.V.
Inventor： Tony Vanhoucke , Viet Thanh Dinh , Anco Heringa , Dirk Klaassen , Evelyne Gridelet , Jan Willem Slotboom
IPC: H01L29/15 , H01L31/0256 , H01L29/737 , H01L29/40 , H01L29/66 , H01L29/732 , H01L29/08 , H01L29/739 , H01L29/06 , H01L29/10 , H01L29/205
CPC classification number: H01L29/737 , H01L29/0649 , H01L29/0692 , H01L29/0821 , H01L29/1004 , H01L29/205 , H01L29/402 , H01L29/407 , H01L29/66242 , H01L29/6628 , H01L29/7327 , H01L29/739
Abstract: A semiconductor device and a method of making the same. The device includes a semiconductor substrate. The device also includes a bipolar transistor on the semiconductor substrate. The bipolar transistor includes an emitter. The bipolar transistor also includes a base located above the emitter. The bipolar transistor further includes a laterally extending collector located above the base. The collector includes a portion that extends past an edge of the base.
Abstract translation: 半导体器件及其制造方法。 该器件包括半导体衬底。 该器件还包括半导体衬底上的双极晶体管。 双极晶体管包括发射极。 双极晶体管还包括位于发射极之上的基极。 双极晶体管还包括位于基极上方的横向延伸的收集器。 收集器包括延伸经过基座边缘的部分。
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公开(公告)号：US20140347135A1
公开(公告)日：2014-11-27
申请号：US14284509
申请日：2014-05-22
Applicant: NXP B.V.
Inventor： Viet Thanh Dinh , Godefridus Adrianus Maria Hurxk , Tony Vanhoucke , Jan Slotboom , Anco Heringa , Ivan Zahariev , Evelyne Gridelet
IPC: H03K17/10 , H03F3/21 , H03F3/19 , H01L29/737 , H01L29/165
CPC classification number: H03K17/10 , G05F1/462 , H01L29/165 , H01L29/402 , H01L29/7327 , H01L29/737 , H03F1/34 , H03F3/19 , H03F3/21 , H03F2200/153
Abstract: The invention provides a bipolar transistor circuit and a method of controlling a bipolar transistor, in which the bipolar transistor has a gate terminal for controlling the electric field in a collector region of the transistor. The bias voltage applied to the gate terminal is controlled to achieve different transistor characteristics.
Abstract translation: 本发明提供了一种双极晶体管电路和双极晶体管的控制方法，其中双极晶体管具有用于控制晶体管的集电极区域中的电场的栅极端子。 施加到栅极端子的偏置电压被控制以实现不同的晶体管特性。
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10.发明申请公开(公告)号：US20140347131A1
公开(公告)日：2014-11-27
申请号：US14286418
申请日：2014-05-23
Applicant: NXP B.V.
Inventor： Viet Thanh Dinh , Godefridus Antonius Maria Hurxk , Tony Vanhoucke , Jan Willem Slotboom , Anco Heringa , Ivan Zahariev , Evelyne Gridelet
CPC classification number: H03K17/10 , G05F1/462 , H01L29/165 , H01L29/402 , H01L29/7327 , H01L29/737 , H03F1/34 , H03F3/19 , H03F3/21 , H03F2200/153
Abstract: A circuit, comprising a semiconductor device with one or more field gate terminals for controlling the electric field in a drift region of the semiconductor device; and a feedback circuit configured to dynamically control a bias voltage or voltages applied to the field gate terminal or terminals, with different control voltages used for different semiconductor device characteristics in real-time in response to a time-varying signal at a further node in the circuit.
Abstract translation: 一种电路，包括具有一个或多个场栅极端子的半导体器件，用于控制半导体器件的漂移区域中的电场; 以及反馈电路，被配置为响应于在另一个节点处的时变信号，动态地控制施加到场门极端子的偏置电压或电压，其具有用于不同半导体器件特性的不同控制电压 电路。
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