Invention Grant
- Patent Title: Semiconductor device having asymmetric active region and method of forming the same
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Application No.: US15401176Application Date: 2017-01-09
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Publication No.: US10014407B2Publication Date: 2018-07-03
- Inventor: Jun-Gu Kang , Myoungkyu Park , Chulho Chung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2016-0002681 20160108
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/08 ; H01L29/10 ; H01L29/161 ; H01L29/66 ; H01L21/8234 ; H01L27/088 ; H01L29/51 ; H01L29/06 ; H01L29/165
Abstract:
Provided are a semiconductor device and a method of forming the same. The semiconductor device includes an active region defined by an isolation layer. A source region portion, a drain region portion and a channel region are located in the active region. The channel region includes a first portion located close to the source region portion and a second portion having a higher threshold voltage than the first portion.
Public/Granted literature
- US20170200823A1 SEMICONDUCTOR DEVICE HAVING ASYMMETRIC ACTIVE REGION AND METHOD OF FORMING THE SAME Public/Granted day:2017-07-13
Information query
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