Invention Grant
- Patent Title: Integrated circuit including embedded memory device for performing dual-transient word line assist using triple power source and device having the same
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Application No.: US15361599Application Date: 2016-11-28
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Publication No.: US10020048B2Publication Date: 2018-07-10
- Inventor: Woojin Rim , Tae Joong Song , Yong Ho Kim , Sung Hyun Park
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2016-0041388 20160405
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/419 ; G11C11/418 ; G06F1/32 ; G11C8/08

Abstract:
An integrated circuit (IC) and a mobile device are provided. The IC includes a memory cell that includes a word line, a bit line pair, and a storage cell connected to the word line and the bit line pair. The IC further includes a timing control circuit configured to generate switch signals based on an operation control signal, and a switch circuit configured to receive a first voltage, a second voltage and a third voltage having different levels, and output, to the word line, one among the first voltage, the second voltage, and the third voltage based on the switch signals.
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