- 专利标题: Nanoshape patterning techniques that allow high-speed and low-cost fabrication of nanoshape structures
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申请号: US14921866申请日: 2015-10-23
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公开(公告)号: US10026609B2公开(公告)日: 2018-07-17
- 发明人: Sidlgata V. Sreenivasan , Anshuman Cherala , Meghali Chopra , Roger Bonnecaze , Ovadia Abed , Bailey Yin , Akhila Mallavarapu , Shrawan Singhal , Brian Gawlik
- 申请人: Board of Regents, The University of Texas System
- 申请人地址: US TX Austin
- 专利权人: Board of Regents, The University of Texas System
- 当前专利权人: Board of Regents, The University of Texas System
- 当前专利权人地址: US TX Austin
- 代理机构: Winstead, P.C.
- 代理商 Robert A. Voigt, Jr.
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; G03F7/00 ; H01L21/308 ; B81C1/00 ; B82Y40/00 ; G11B5/74 ; H01L29/94
摘要:
A method for template fabrication of ultra-precise nanoscale shapes. Structures with a smooth shape (e.g., circular cross-section pillars) are formed on a substrate using electron beam lithography. The structures are subject to an atomic layer deposition of a dielectric interleaved with a deposition of a conductive film leading to nanoscale sharp shapes with features that exceed electron beam resolution capability of sub-10 nm resolution. A resist imprint of the nanoscale sharp shapes is performed using J-FIL. The nanoscale sharp shapes are etched into underlying functional films on the substrate forming a nansohaped template with nanoscale sharp shapes that include sharp corners and/or ultra-small gaps. In this manner, sharp shapes can be retained at the nanoscale level. Furthermore, in this manner, imprint based shape control for novel shapes beyond elementary nanoscale structures, such as dots and lines, can occur at the nanoscale level.
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