Invention Grant
- Patent Title: Decoupling capacitor with metal programmable knee frequency
-
Application No.: US15360777Application Date: 2016-11-23
-
Publication No.: US10026735B2Publication Date: 2018-07-17
- Inventor: Andi Zhao , Ramaprasath Vilangudipitchai , Dorav Kumar
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Arent Fox, LLP
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L27/088 ; H01L23/528 ; H01L27/02 ; H03K17/16

Abstract:
A MOS IC includes pMOS transistors, each having a pMOS transistor drain, source, and gate. Each pMOS transistor gate extends in a first direction and is coupled to other pMOS transistor gates. Each pMOS transistor source/drain are coupled to a first voltage source. The MOS IC further includes a first metal interconnect extending over the pMOS transistors. The first metal interconnect has first and second ends. The first metal interconnect is coupled to each pMOS transistor gate and is coupled to a second voltage source less than the first voltage source. One of each pMOS transistor gate or the second voltage source is coupled to the first metal interconnect through at least one tap point located between the first and second ends. The pMOS transistors and the first metal interconnect function as a decoupling capacitor.
Public/Granted literature
- US20180145071A1 DECOUPLING CAPACITOR WITH METAL PROGRAMMABLE KNEE FREQUENCY Public/Granted day:2018-05-24
Information query
IPC分类: