公开(公告)号：US10026735B2

公开(公告)日：2018-07-17

申请号：US15360777

申请日：2016-11-23

Applicant: QUALCOMM Incorporated

Inventor： Andi Zhao ,  Ramaprasath Vilangudipitchai ,  Dorav Kumar

IPC: H01L23/522 ,  H01L27/088 ,  H01L23/528 ,  H01L27/02 ,  H03K17/16

Abstract: A MOS IC includes pMOS transistors, each having a pMOS transistor drain, source, and gate. Each pMOS transistor gate extends in a first direction and is coupled to other pMOS transistor gates. Each pMOS transistor source/drain are coupled to a first voltage source. The MOS IC further includes a first metal interconnect extending over the pMOS transistors. The first metal interconnect has first and second ends. The first metal interconnect is coupled to each pMOS transistor gate and is coupled to a second voltage source less than the first voltage source. One of each pMOS transistor gate or the second voltage source is coupled to the first metal interconnect through at least one tap point located between the first and second ends. The pMOS transistors and the first metal interconnect function as a decoupling capacitor.