- Patent Title: Semiconductor device having field insulation layer between two fins
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Application No.: US15292515Application Date: 2016-10-13
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Publication No.: US10032864B2Publication Date: 2018-07-24
- Inventor: Kyung Seok Min , Mi Gyeong Gwon , Seong Jin Nam , Sug Hyun Sung , Young Hoon Song , Young Mook Oh
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2016-0001535 20160106
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L21/762 ; H01L21/8234 ; H01L29/66 ; H01L29/08 ; H01L29/16 ; H01L29/161 ; H01L21/311 ; H01L29/165 ; H01J37/32
Abstract:
Semiconductor devices are provided. The semiconductor device includes a first fin and a second fin on a substrate and a field insulation layer between the first fin and the second fin. The field insulation layer include a first insulation layer and a second insulation layer on the first insulation layer and connected to the first insulation layer. The second insulation layer is wider than the first insulation layer. A ratio of a top width to a bottom width of each of the first fin and the second fin exceeds 0.5.
Public/Granted literature
- US20170194426A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-07-06
Information query
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