- 专利标题: Deposition mask for forming thin-film patterns
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申请号: US14439309申请日: 2013-07-18
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公开(公告)号: US10035162B2公开(公告)日: 2018-07-31
- 发明人: Michinobu Mizumura
- 申请人: V TECHNOLOGY CO., LTD.
- 申请人地址: JP
- 专利权人: V TECHNOLOGY CO., LTD.
- 当前专利权人: V TECHNOLOGY CO., LTD.
- 当前专利权人地址: JP
- 代理机构: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- 优先权: JP2012-238956 20121030
- 国际申请: PCT/JP2013/069461 WO 20130718
- 国际公布: WO2014/069049 WO 20140508
- 主分类号: H01L21/033
- IPC分类号: H01L21/033 ; B05B12/20 ; B05C21/00 ; H01L51/00 ; C23C16/04 ; B05D1/32 ; C23C14/04
摘要:
The present invention provides a deposition mask for forming a thin-pattern by depositing a deposition material on a substrate, the deposition mask includes: a thin plate-shaped magnetic metal member 1 in which a through-hole 4 having shape and dimensions greater than those of the thin-film pattern is provided at a position corresponding to the thin-film pattern; and a resin film 2 which is provided in close contact with one surface of the magnetic metal member 1 and in which an opening pattern 5 having shape and dimensions identical to those of the thin-film pattern is formed at a position corresponding to the thin-film pattern in the through-hole 4, the resin film 2 being permeable to visible light. The opening pattern 5 is provided within an opening pattern formation region 7 surrounded by a deposition shadow region 6 defined by the thickness of the magnetic metal member 1 and the maximum angle of incidence of the deposition material to the film surface in the through-hole 4.
公开/授权文献
- US20150290667A1 DEPOSITION MASK 公开/授权日:2015-10-15
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