The present disclosure provides a piezoelectric film sensor, a piezoelectric film sensor circuit and methods for manufacturing the same. The method for manufacturing the piezoelectric film sensor comprises: a step of forming a piezoelectric film on a substrate, and a step of subjecting the piezoelectric film to laser annealing using a laser annealing process so as to complete phase-forming transition of the piezoelectric film. Since the annealing temperature in the laser annealing process can be controlled in a range of 300° C. to 400° C., the manufacturing process can be not only applied to ensure a good performance of a piezoelectric film, but also can be used for manufacturing a flexible piezoelectric film sensor.