Invention Grant
- Patent Title: Single-chip multi-frequency film bulk acoustic-wave resonators
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Application No.: US15247803Application Date: 2016-08-25
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Publication No.: US10038422B2Publication Date: 2018-07-31
- Inventor: Changhan Hobie Yun , Je-Hsiung Lan , Chengjie Zuo , David Berdy , Jonghae Kim , Mario Velez , Niranjan Sunil Mudakatte , Shiqun Gu
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Haynes and Boone, LLP
- Main IPC: H03H9/205
- IPC: H03H9/205 ; H03H3/04 ; H01L41/332 ; H03H9/54 ; H03H3/02

Abstract:
A single-die multi-FBAR (film bulk acoustic resonator) device includes multiple FBARs having different resonant frequencies formed over a single substrate. The FBARs include piezoelectric layers having different thicknesses but with upper electrodes formed at a same height over the substrate, lower electrodes at different heights over the substrate, and different sized air gaps separating the lower electrodes from the substrate.
Public/Granted literature
- US20180062617A1 SINGLE-CHIP MULTI-FREQUENCY FILM BULK ACOUSTIC-WAVE RESONATORS Public/Granted day:2018-03-01
Information query
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