Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15818357Application Date: 2017-11-20
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Publication No.: US10041841B2Publication Date: 2018-08-07
- Inventor: Naoya Arisaka , Masataka Minami , Takahiro Miki
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC.
- Priority: JP2014-263367 20141225
- Main IPC: G01K7/01
- IPC: G01K7/01 ; H03K21/38 ; H03K21/00

Abstract:
A method of sensing a temperature of a semiconductor device, includes: measuring, by a time measuring circuit, time until a count value, which is obtained from a counter by counting a first signal having a frequency corresponding to a first voltage, reaches a largest count value which can be counted by the counter; and obtaining, by the counter, a piece of digital information corresponding to the first voltage based on a count value obtained by counting a second signal having a frequency corresponding to a second voltage, which is different from the first voltage, based on the time measured by the time measuring circuit, the first voltage depending upon the temperature of the semiconductor device.
Public/Granted literature
- US20180073935A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-03-15
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