公开(公告)号：US09835499B2

公开(公告)日：2017-12-05

申请号：US14928856

申请日：2015-10-30

Applicant: Renesas Electronics Corporation

Inventor： Naoya Arisaka ,  Masataka Minami ,  Takahiro Miki

IPC: G01K7/01 ,  H03K21/00 ,  H03K21/38

CPC classification number: G01K7/01 ,  G01K2217/00 ,  G01K2219/00 ,  H03K21/00 ,  H03K21/38

Abstract: The present invention provides a semiconductor device having a sensor capable of improving precision while suppressing increase in occupation area. A semiconductor device has: a first counter; and a second counter (time measuring circuit) measuring time until a count value, which is obtained by counting a first signal having a frequency corresponding to a first voltage, reaches a largest count value which can be counted by the first counter. The first counter obtains a piece of digital information corresponding to the first voltage on the basis of a count value obtained by counting a second signal having a frequency corresponding to a second voltage, which is different from the first voltage, on the basis of the time measured by the time measuring circuit.

公开(公告)号：US10041841B2

公开(公告)日：2018-08-07

申请号：US15818357

申请日：2017-11-20

Applicant: Renesas Electronics Corporation

Inventor： Naoya Arisaka ,  Masataka Minami ,  Takahiro Miki

IPC: G01K7/01 ,  H03K21/38 ,  H03K21/00

Abstract: A method of sensing a temperature of a semiconductor device, includes: measuring, by a time measuring circuit, time until a count value, which is obtained from a counter by counting a first signal having a frequency corresponding to a first voltage, reaches a largest count value which can be counted by the counter; and obtaining, by the counter, a piece of digital information corresponding to the first voltage based on a count value obtained by counting a second signal having a frequency corresponding to a second voltage, which is different from the first voltage, based on the time measured by the time measuring circuit, the first voltage depending upon the temperature of the semiconductor device.