Invention Grant
- Patent Title: Ferroelectric mechanical memory based on remanent displacement and method
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Application No.: US15131881Application Date: 2016-04-18
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Publication No.: US10043565B2Publication Date: 2018-08-07
- Inventor: Glen Richard Fox , Jeffrey S. Pulskamp , Ronald G. Polcawich
- Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I
- Applicant Address: US DC Washington
- Assignee: The United States of America as represented by the Secretary of the Army
- Current Assignee: The United States of America as represented by the Secretary of the Army
- Current Assignee Address: US DC Washington
- Agent Lawrence E. Anderson
- Main IPC: H01L21/02
- IPC: H01L21/02 ; G11C11/22 ; G11C11/50 ; G11C23/00 ; H01L41/09 ; H01H57/00

Abstract:
A ferroelectric mechanical memory structure comprising a substrate, a MEMS switch element movable between a first position and at least one second position, the MEMS switch element comprising first and second electrodes, a layer of ferroelectric material positioned between the first and second electrodes so that upon application of voltage between the first and second electrodes the MEMS switch element moves between the first position and the second position, and a switch contact which contacts the first electrode only when the MEMS switch element is in the first position, wherein the ferroelectric material is selected so that the remanent strain within the layer of ferroelectric material is controlled by the history of the voltage potential applied to the ferroelectric material by the first and second electrodes, and wherein the remanent strain is sufficient to retain the MEMS switch element in the first or second position upon removal of the voltage.
Public/Granted literature
- US20160276014A1 Ferroelectric Mechanical Memory Based on Remanent Displacement and Method Public/Granted day:2016-09-22
Information query
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