公开(公告)号：US20160276014A1

公开(公告)日：2016-09-22

申请号：US15131881

申请日：2016-04-18

Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I

Inventor： Glen Richard Fox ,  Jeffrey S. Pulskamp ,  Ronald G. Polcawich

IPC: G11C11/22 ,  H01L43/10 ,  H01L43/02

CPC classification number: G11C11/221 ,  G11C11/22 ,  G11C11/50 ,  G11C23/00 ,  H01H2057/006 ,  H01L41/094

Abstract: A ferroelectric mechanical memory structure comprising a substrate, a MEMS switch element movable between a first position and at least one second position, the MEMS switch element comprising first and second electrodes, a layer of ferroelectric material positioned between the first and second electrodes so that upon application of voltage between the first and second electrodes the MEMS switch element moves between the first position and the second position, and a switch contact which contacts the first electrode only when the MEMS switch element is in the first position, wherein the ferroelectric material is selected so that the remanent strain within the layer of ferroelectric material is controlled by the history of the voltage potential applied to the ferroelectric material by the first and second electrodes, and wherein the remanent strain is sufficient to retain the MEMS switch element in the first or second position upon removal of the voltage.

Abstract translation: 一种铁电机械存储器结构，包括衬底，可在第一位置和至少一个第二位置之间移动的MEMS开关元件，所述MEMS开关元件包括第一和第二电极，位于第一和第二电极之间的铁电材料层， 在第一和第二电极之间施加电压，MEMS开关元件在第一位置和第二位置之间移动，以及仅当MEMS开关元件处于第一位置时与第一电极接触的开关触点，其中选择铁电材料 使得铁电材料层内的剩余应变由第一和第二电极施加到铁电材料的电压电势的历史来控制，其中剩余应变足以将MEMS开关元件保持在第一或第二电极 去除电压时的位置。

公开(公告)号：US10043565B2

公开(公告)日：2018-08-07

申请号：US15131881

申请日：2016-04-18

Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I

Inventor： Glen Richard Fox ,  Jeffrey S. Pulskamp ,  Ronald G. Polcawich

IPC: H01L21/02 ,  G11C11/22 ,  G11C11/50 ,  G11C23/00 ,  H01L41/09 ,  H01H57/00

Abstract: A ferroelectric mechanical memory structure comprising a substrate, a MEMS switch element movable between a first position and at least one second position, the MEMS switch element comprising first and second electrodes, a layer of ferroelectric material positioned between the first and second electrodes so that upon application of voltage between the first and second electrodes the MEMS switch element moves between the first position and the second position, and a switch contact which contacts the first electrode only when the MEMS switch element is in the first position, wherein the ferroelectric material is selected so that the remanent strain within the layer of ferroelectric material is controlled by the history of the voltage potential applied to the ferroelectric material by the first and second electrodes, and wherein the remanent strain is sufficient to retain the MEMS switch element in the first or second position upon removal of the voltage.