Buried interconnect for semiconductor circuits
Abstract:
A semiconductor circuit comprises a Front End of Line (FEOL) comprising a plurality of transistors, each of which having a source region, a drain region and a gate region arranged between the source region and the drain region and comprising a gate electrode. The semiconductor circuit also comprises a buried interconnect that is arranged in the FEOL and electrically connected to the gate region from below through a bottom contact portion of the gate electrode. By using a buried interconnect the routing of the circuit may be facilitated.
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