Invention Grant
- Patent Title: Temperature gradients for controlling memristor switching
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Application No.: US15536602Application Date: 2014-12-17
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Publication No.: US10049738B2Publication Date: 2018-08-14
- Inventor: Gary Gibson , R. Stanley Williams
- Applicant: Hewlett Packard Enterprise Development LP
- Applicant Address: US TX Houston
- Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee Address: US TX Houston
- Agency: Hewlett Packard Enterprise Patent Department
- International Application: PCT/US2014/070744 WO 20141217
- International Announcement: WO2016/099472 WO 20160623
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; H01L45/00

Abstract:
A memristor includes a bottom electrode, a top electrode, and an active region disposed therebetween. The active region has an electrically conducting filament in an electrically insulating medium, extending between the bottom electrode and the top electrode. The memristor further includes a temperature gradient element for controlling switching.
Public/Granted literature
- US20170372782A1 TEMPERATURE GRADIENTS FOR CONTROLLING MEMRISTOR SWITCHING Public/Granted day:2017-12-28
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