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公开(公告)号：US10529418B2
公开(公告)日：2020-01-07
申请号：US16079998
申请日：2016-02-19
发明人： Miao Hu , John Paul Strachan , Zhiyong Li , R. Stanley Williams
摘要： Examples herein relate to linear transformation accelerators. An example linear transformation accelerator may include a crossbar array programmed to calculate a linear transformation. The crossbar array has a plurality of words lines, a plurality of bit lines, and a memory cell coupled between each unique combination of one word line and one bit line, where the memory cells are programmed according to a linear transformation matrix. The plurality of word lines are to receive an input vector, and the plurality of bit lines are to output an output vector representing a linear transformation of the input vector.
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公开(公告)号：US20180373675A1
公开(公告)日：2018-12-27
申请号：US16064655
申请日：2016-01-28
发明人： John Paul Strachan , Miao Hu , R. Stanley Williams , Zhiyong Li
摘要： A technique includes providing a first set of values to a memristor crossbar array and using the memristor crossbar array to perform a Fourier transformation. Using the memristor crossbar array to perform the Fourier transform includes using the array to apply a Discrete Fourier Transform (DFT) to the first set of values to provide a second set of values.
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公开(公告)号：US10153729B2
公开(公告)日：2018-12-11
申请号：US15141410
申请日：2016-04-28
摘要： In some examples, a device includes a nano-scale oscillator that exhibits chaotic oscillation responsive to a control input to the nano-scale oscillator, where the control input including a tunable input parameter.
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公开(公告)号：US09905757B2
公开(公告)日：2018-02-27
申请号：US15032913
申请日：2013-11-12
CPC分类号： H01L45/1226 , H01L27/2418 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/16
摘要： A nonlinear memristor device with a three-layer selector includes a memristor in electrical series with a three-layer selector. The memristor comprises at least one electrically conducting layer and at least one electrically insulating layer. The three-layer selector comprises a three-layer structure selected from the group consisting of XN—XO—XN; XN—YO—ZN; XN—YO—XN; XO—XN—XO; XO—YN—XO; XO—YN—ZO; XO—YO—XO; XO—YO—ZO; XN—YN—ZN; and XN—YN—XN, X represents a compound-forming metal different from Y and Z.
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公开(公告)号：US09812500B2
公开(公告)日：2017-11-07
申请号：US15114010
申请日：2014-01-31
发明人： Gary Gibson , Warren Jackson , R. Stanley Williams
CPC分类号： H01L27/2418 , G11C7/04 , G11C11/1659 , G11C13/0007 , G11C13/0023 , G11C13/003 , G11C2213/73 , G11C2213/76 , H01L45/00 , H01L45/1286 , H01L45/145
摘要： A circuit component that exhibits a region of negative differential resistance includes: a first layer of material; and a second layer of material in contact with the first layer of material, the contact forming a first self-heating interface. The first self-heating interface is structured such that an electrical current flowing from the first layer of material to the second layer of material encounters an electrical impedance occurring at the first interface that is greater than any electrical impedance occurring in the first and second layers of material, wherein heating occurring at the first interface is dominated by Joule heating caused by the electrical impedance occurring at the first interface, and wherein the electrical impedance occurring at the first interface decreases with increasing temperature to induce a region of negative differential resistance.
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公开(公告)号：US10374155B2
公开(公告)日：2019-08-06
申请号：US15653210
申请日：2017-07-18
发明人： R. Stanley Williams
摘要： An electrically actuated switch comprises a first electrode, a second electrode, and an active region disposed therebetween. The active region comprises at least one primary active region comprising at least one material that can be doped or undoped to change its electrical conductivity, and a secondary active region comprising at least one material for providing a source/sink of ionic species that act as dopants for the primary active region(s). Methods of operating the switch are also provided.
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公开(公告)号：US20190066780A1
公开(公告)日：2019-02-28
申请号：US16079998
申请日：2016-02-19
发明人： Miao Hu , John Paul Strachan , Zhiyong Li , R. Stanley Williams
CPC分类号： G11C13/0028 , G06G7/16 , G11C11/56 , G11C13/0026 , G11C13/004 , G11C13/0069 , G11C2213/77
摘要： Examples herein relate to linear transformation accelerators. An example linear transformation accelerator may include a crossbar array programmed to calculate a linear transformation. The crossbar array has a plurality of words lines, a plurality of bit lines, and a memory cell coupled between each unique combination of one word line and one bit line, where the memory cells are programmed according to a linear transformation matrix. The plurality of word lines are to receive an input vector, and the plurality of bit lines are to output an output vector representing a linear transformation of the input vector.
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公开(公告)号：US20160351622A1
公开(公告)日：2016-12-01
申请号：US15114010
申请日：2014-01-31
发明人： Gary Gibson , Warren Jackson , R. Stanley Williams
CPC分类号： H01L27/2418 , G11C7/04 , G11C11/1659 , G11C13/0007 , G11C13/0023 , G11C13/003 , G11C2213/73 , G11C2213/76 , H01L45/00 , H01L45/1286 , H01L45/145
摘要： A circuit component that exhibits a region of negative differential resistance includes: a first layer of material; and a second layer of material in contact with the first layer of material, the contact forming a first self-heating interface. The first self-heating interface is structured such that an electrical current flowing from the first layer of material to the second layer of material encounters an electrical impedance occurring at the first interface that is greater than any electrical impedance occurring in the first and second layers of material, wherein heating occurring at the first interface is dominated by Joule heating caused by the electrical impedance occurring at the first interface, and wherein the electrical impedance occurring at the first interface decreases with increasing temperature to induce a region of negative differential resistance.
摘要翻译： 具有负差分电阻的区域的电路部件包括：第一层材料; 以及与所述第一材料层接触的第二材料层，所述接触件形成第一自加热界面。 第一自加热界面被构造成使得从第一材料层流向第二层材料的电流遇到在第一界面处发生的电阻抗大于在第一和第二层中发生的任何电阻抗 材料，其中在第一界面处发生的加热由由在第一界面处发生的电阻抗引起的焦耳加热主导，并且其中在第一界面处发生的电阻抗随温度升高而降低，以引起负差分电阻的区域。
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公开(公告)号：US10147762B2
公开(公告)日：2018-12-04
申请号：US15316762
申请日：2014-06-26
摘要： Protective elements are provided for non-volatile memory cells in crossbar arrays in which each memristor is situated at a crosspoint of the array. Each memristor is provided with a protective element. The protective element includes a layer of a first oxide that upon heating converts to a second oxide having a higher resistivity than the first oxide.
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公开(公告)号：US20180336947A1
公开(公告)日：2018-11-22
申请号：US16048502
申请日：2018-07-30
发明人： Gary Gibson , R. Stanley Williams
CPC分类号： G11C13/0069 , G11C13/0007 , G11C2013/008 , G11C2213/15 , G11C2213/52 , H01L45/08 , H01L45/1233 , H01L45/128 , H01L45/146
摘要： A memristor includes a bottom electrode, a top electrode, and an active region disposed therebetween. The active region has an electrically conducting filament in an electrically insulating medium, extending between the bottom electrode and the top electrode. The memristor further includes a temperature gradient element for controlling switching.
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