Invention Grant
- Patent Title: Power amplifier
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Application No.: US15204734Application Date: 2016-07-07
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Publication No.: US10050590B2Publication Date: 2018-08-14
- Inventor: Jun-De Jin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H03F1/56
- IPC: H03F1/56 ; H03F3/24 ; H03F3/193

Abstract:
A power amplifier (PA) cell is coupled to an input signal source, and includes a transistor coupled to the load; a first inductor coupled to a gate of the transistor; and a second inductor coupled to a source of the transistor, wherein the first inductor and the second inductor each includes a first conductive coil and a second conductive coil, respectively, having first and second inductance values, respectively, such that the PA cell includes a terminal between the gate of the transistor and the input signal source, and the terminal is impedance matched with the input signal source.
Public/Granted literature
- US20170279418A1 POWER AMPLIFIER Public/Granted day:2017-09-28
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