- 专利标题: Coplanar metal-insulator-metal capacitive structure
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申请号: US15603527申请日: 2017-05-24
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公开(公告)号: US10056448B2公开(公告)日: 2018-08-21
- 发明人: Chern-Yow Hsu , Shih-Chang Liu
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Hayne and Boone LLP
- 主分类号: H01L29/92
- IPC分类号: H01L29/92 ; H01L49/02 ; H01L21/321
摘要:
A method of fabricating a metal-insulator-metal (MIM) capacitor structure on a substrate includes forming a patterned metal layer over the substrate; forming an insulator layer over the patterned metal layer; forming a second metal layer over the insulator layer; removing part of the insulating layer and part of the second metal layer thereby forming a substantially coplanar surface that is formed by the patterned metal layer, the insulator layer, and the second metal layer; removing a portion of the second metal layer and a portion of the patterned metal layer to form a fin from the insulator layer that protrudes beyond the first metal layer and the second metal layer; and forming an inter-metal dielectric layer over the fin.
公开/授权文献
- US20170256606A1 Coplanar Metal-Insulator-Metal Capacitive Structure 公开/授权日:2017-09-07
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