- 专利标题： Semiconductor device and method for fabricating the same
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申请号： US15611759申请日： 2017-06-01
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公开(公告)号： US10062613B1公开(公告)日： 2018-08-28
- 发明人: Feng-Yi Chang , Shih-Fang Tzou , Yu-Cheng Tung , Ming-Feng Kuo , Li-Chiang Chen
- 申请人： UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- 申请人地址： TW Hsin-Chu CN Quanzhou, Fujian Province
- 专利权人： UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- 当前专利权人： UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu CN Quanzhou, Fujian Province
- 代理商 Winston Hsu
- 优先权： CN201710308679 20170504
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L29/51 ; H01L29/78 ; H01L21/8234
摘要：
A method for fabricating semiconductor device includes the steps of: forming a first trench and a second trench in a substrate; forming a first work function metal layer in the first trench and the second trench; forming a patterned mask to cover the second trench; removing the first work function metal layer from the first trench; forming a second work function metal layer in the first trench and the second trench; and forming a conductive layer in the first trench and the second trench to form a first gate structure and a second gate structure.
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