Invention Grant
- Patent Title: Method and structure for formation of replacement metal gate field effect transistors
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Application No.: US14721402Application Date: 2015-05-26
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Publication No.: US10062618B2Publication Date: 2018-08-28
- Inventor: Takashi Ando , Aritra Dasgupta , Balaji Kannan , Unoh Kwon
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grandy Cayman
- Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee Address: KY Grandy Cayman
- Agency: Heslin Rothenberg Farley & Mesiti, P.C.
- Agent George S. Blasiak, Esq.
- Main IPC: H01L27/11
- IPC: H01L27/11 ; H01L21/8238 ; H01L21/324 ; H01L27/092 ; H01L29/423 ; H01L29/49
Abstract:
Embodiments of the present invention provide a process that maintains a “keep cap” metal nitride layer on PFET devices within a CMOS structure. The keep cap metal nitride layer is in place while an N-type work function metal is formed on the NFET devices within the CMOS structure. A sacrificial rare earth oxide layer, such as a lanthanum oxide layer is used to facilitate removal of the n-type work function metal selective to the keep cap metal nitride layer.
Public/Granted literature
- US20160351453A1 METHOD AND STRUCTURE FOR FORMATION OF REPLACEMENT METAL GATE FIELD EFFECT TRANSISTORS Public/Granted day:2016-12-01
Information query
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