- 专利标题： Electromagnetic conversion device and information memory comprising the same
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申请号： US15548204申请日： 2016-01-20
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公开(公告)号： US10062834B2公开(公告)日： 2018-08-28
- 发明人: Yang Sun , Yisheng Chai , Dashan Shang
- 申请人： Institute of Physics, Chinese Academy of Sciences
- 申请人地址： CN
- 专利权人： INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES
- 当前专利权人： INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES
- 当前专利权人地址： CN
- 代理机构： Zhong Law, LLC
- 优先权： CN201510078540 20150213
- 国际申请： PCT/CN2016/071447 WO 20160120
- 国际公布： WO2016/127768 WO 20160818
- 主分类号： G11C11/22
- IPC分类号： G11C11/22 ; H01L43/02 ; H01L29/82 ; H01L41/02 ; H01L41/083 ; G11C11/02 ; H01F10/14 ; H01F10/16 ; H01L41/187 ; H01L41/20 ; H01L43/10
摘要：
The present invention provides an electromagnetic conversion device, comprising: an intermediate layer and electrode layers located on both sides of the intermediate layer, wherein the intermediate layer is a magnetoelectric layer. The electromagnetic conversion device realizes the direct conversion of charge and magnetic flux, and thus can be used as a fourth fundamental circuit element, so as to provide a new degree of freedom for the design of electronic circuits and information function devices. In addition, the electromagnetic conversion device can be used as memory elements to form a nonvolatile magnetoelectric information memory.
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