公开(公告)号：US20240003996A1

公开(公告)日：2024-01-04

申请号：US18342839

申请日：2023-06-28

申请人： Resonac Corporation

发明人： Akira SAKAWAKI ,  Daizo ENDO ,  Sho TONEGAWA ,  Yasumasa WATANABE

IPC分类号： G01R33/06 ,  G01R33/00 ,  H01F10/16

CPC分类号： G01R33/063 ,  G01R33/0052 ,  H01F10/16

摘要： A magnetic sensor includes: a substrate; and a sensitive portion disposed on the substrate and having a longitudinal direction and a transverse direction. The sensitive portion senses a magnetic field by a magnetic impedance effect. The sensitive portion includes a soft magnetic material layer composed of a soft magnetic material having uniaxial magnetic anisotropy in a direction intersecting the longitudinal direction and sensing the magnetic field. The sensitive portion also includes a secondary soft magnetic material layer laminated between the substrate and the soft magnetic material layer. The secondary soft magnetic material layer is composed of a soft magnetic material with large saturation magnetization compared to the soft magnetic material constituting the soft magnetic material layer.

公开(公告)号：US20230245809A1

公开(公告)日：2023-08-03

申请号：US18159390

申请日：2023-01-25

申请人： TDK CORPORATION

发明人： Hajime AMANO ,  Kensuke ARA ,  Kazuhiro YOSHIDOME ,  Risako TSURUMARU

IPC分类号： H01F10/00 ,  H01F10/14 ,  H01F10/16

CPC分类号： H01F10/007 ,  H01F10/14 ,  H01F10/16

摘要： A nanogranular magnetic film includes a structure including first phases comprised of nano-domains dispersed in a second phase. The first phases include at least one selected from the group consisting of Fe, Co, and Ni. The second phase includes at least one selected from the group consisting of O, N, and F. A ratio of a volume of the first phases to a total volume of the first phases and the second phase is 65% or less. A noble gas element is included at 0.20 at % or more and 0.80 at % or less.

公开(公告)号：US11018293B2

公开(公告)日：2021-05-25

申请号：US16739521

申请日：2020-01-10

申请人： TDK CORPORATION

发明人： Tomoyuki Sasaki

IPC分类号： H01L43/08 ,  G01R33/09 ,  G11B5/39 ,  H01F10/14 ,  H01F10/16 ,  H01F10/26 ,  H01F10/32 ,  H01L43/10 ,  H01L27/105 ,  H01L29/82

摘要： A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a composition formula of AB2Ox (0

公开(公告)号：US20200312510A1

公开(公告)日：2020-10-01

申请号：US16954983

申请日：2018-12-14

申请人： Montana State University ,  The Regents of The University of California

发明人： Ryan J. Snow ,  Yves U. Idzerda ,  Elke Arenholz

IPC分类号： H01F10/14 ,  H01F41/32 ,  H01F10/32 ,  H01F10/30 ,  H01F10/16 ,  G11B5/706

摘要： Large magnetic moment compositions are formed by stabilizing ternary or other alloys with a epitaxial control layer. Compositions that are unstable in bulk specimen are thus stabilized and exhibit magnetic moments that are greater that a Slater-Pauling limit. In one example, FexCoyMnz layers are produced on an MgO(001) substrate with an MgO surface serving to control the structure of the FexCoyMnz layers. Magnetizations greater than 3 Bohr magnetons are produced.

公开(公告)号：US20200286951A1

公开(公告)日：2020-09-10

申请号：US16882600

申请日：2020-05-25

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Ji-Feng YING ,  Baohua NIU

IPC分类号： H01L27/22 ,  G11C11/16 ,  H01F10/14 ,  H01F10/16 ,  H01L43/12 ,  H01F10/32 ,  H01L43/08

摘要： A magnetic detection circuit for a magnetic random access memory (MRAM) is provided. The magnetic detection circuit includes a sensing array and a controller. The sensing array includes a plurality of sensing cells, and each of plurality of sensing cells includes a first magnetic tunnel junction (MTJ) device. The controller is configured to periodically write and read the sensing cells to obtain a difference between first data written to the sensing cells and second data read from the sensing cells. When the difference between the first data and the second data is greater than a threshold value, the controller is configured to stop a write operation of a plurality of memory cells of the MRAM until the difference between the first data and the second data is less than the threshold value.

公开(公告)号：US10727402B2

公开(公告)日：2020-07-28

申请号：US16478492

申请日：2018-01-17

申请人： TOHOKU UNIVERSITY ,  KONICA MINOLTA, INC.

发明人： Yasuo Ando ,  Mikihiko Oogane ,  Kosuke Fujiwara ,  Koujirou Sekine ,  Junichi Jono ,  Masaaki Tsuchida

IPC分类号： H01L43/12 ,  H01F41/22 ,  H01L43/08 ,  H01L43/10 ,  G01R33/09 ,  H01F10/16

摘要： A method for producing a tunnel magnetoresistive element includes a stacking step, then in-magnetic field heating, and then dry etching. The stacking includes stacking a B absorption layer which is in contact with an upper surface of a CoFeB layer. The dry etching includes removal of layers to the B absorption layer. An end of etching is set as an end point time detected by an analysis device when a final layer before the B absorption layer directly above the CoFeB layer is exposed has reduced to a prescribed level, or when the B absorption layer directly above the CoFeB layer has increased to the prescribed level. An amount of over-etching after the end point time is specified in advance, and the B absorption layer is stacked such that the thickness from the prescribed level to the upper surface of the CoFeB layer corresponds to the over-etching amount.

公开(公告)号：US10600538B2

公开(公告)日：2020-03-24

申请号：US15480741

申请日：2017-04-06

申请人： Commissariat a l'energie atomique et aux energies alternatives

发明人： Bertrand Delaet ,  Sophie Giroud ,  Rachid Hida

IPC分类号： H01F1/047 ,  G01R33/038 ,  H01F41/02 ,  H01F10/16 ,  H01F10/30 ,  H01F10/00 ,  G01R33/00 ,  H01F10/14

摘要： A permanent magnet includes a stack of N patterns stacked immediately one above the other in a stacking direction, each pattern including an antiferromagnetic layer made of antiferromagnetic material, a ferromagnetic layer made of ferromagnetic material, the directions of magnetization of the various ferromagnetic layers of all the patterns all being identical to one another. At least one ferromagnetic layer includes a first sub-layer made of CoFeB whose thickness is greater than 0.05 nm, and a second sub-layer made of a ferromagnetic material different from CoFeB and whose thickness is greater than the thickness of the first sub-layer.

公开(公告)号：US20200058429A1

公开(公告)日：2020-02-20

申请号：US16545517

申请日：2019-08-20

申请人： THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ALABAMA ,  TDK CORPORATION

发明人： Takao Suzuki ,  Tim Mewes ,  Gary Mankey ,  Claudia Mewes ,  Kyotaro Abe ,  Isao Kanada ,  Yusuke Ariake

IPC分类号： H01F10/16 ,  C30B29/16 ,  C30B23/02 ,  C30B29/52 ,  C23C14/18 ,  C22C38/10 ,  C22C38/02

摘要： An Fe—Co—Si alloy magnetic thin film contains, in terms of atomic ratio, 20% to 25% Co and greater than 0% to 20% Si. The Fe—Co—Si alloy magnetic thin film primarily has a body-centered cubic crystal structure. Among three directions of the crystal structure, one of the three directions is perpendicular to a substrate surface and the other two directions are parallel to the substrate surface. The Fe—Co—Si alloy magnetic thin film deposited onto MgO (100) has suitable magnetic properties, that is, a high magnetization of 1100 to 1725 emu/cc, a coercive force of less than 95 Oe, and an effective damping parameter of less than 0.001.

公开(公告)号：US20190157546A1

公开(公告)日：2019-05-23

申请号：US16251783

申请日：2019-01-18

申请人： TDK CORPORATION

发明人： Tomoyuki SASAKI

IPC分类号： H01L43/08 ,  H01F10/32 ,  H01L27/105 ,  H01L29/82 ,  G01R33/09 ,  H01L43/10 ,  H01F10/30 ,  H01F10/16 ,  G11B5/39

摘要： A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer has a spinel structure in which cations are arranged in a disordered manner, and the tunnel barrier layer is expressed by a composition formula of (M1-xZnx)((T1)2-y(T2)y)O4 wherein M represents a non-magnetic divalent cation other than Zn, each of T1 and T2 represents a non-magnetic trivalent cation, and x and y represent a composition ratio in a region where composition ratios combined as follows ((1) to (5)) are vertexes, and the vertexes are connected by straight lines: (1) x=0.2, y=0.1, (2) x=0.8, y=0.1, (3) x=0.8, y=1.7, (4) x=0.6, y=1.7, and (5) x=0.2, y=0.7.

公开(公告)号：US20190074433A1

公开(公告)日：2019-03-07

申请号：US16179461

申请日：2018-11-02

申请人： TOHOKU UNIVERSITY

发明人： Hideo SATO ,  Shoji IKEDA ,  Mathias BERSWEILER ,  Hiroaki HONJO ,  Kyota WATANABE ,  Shunsuke FUKAMI ,  Fumihiro MATSUKURA ,  Kenchi ITO ,  Masaaki NIWA ,  Tetsuo ENDOH ,  Hideo OHNO

IPC分类号： H01L43/08 ,  H01L43/10 ,  H01L27/22 ,  H01F10/32 ,  H01L27/105 ,  H01L29/82 ,  H01F10/16 ,  G11C11/16

摘要： A magnetoresistance effect element includes first and second magnetic layers having a perpendicular magnetization direction, and a first non-magnetic layer disposed adjacent to the first magnetic layer and on a side opposite to a side on which the second magnetic layer is disposed. An interfacial perpendicular magnetic anisotropy exists at an interface between the first magnetic layer and the first non-magnetic layer, and the anisotropy causes the first magnetic layer to have a magnetization direction perpendicular to the surface of the layers. An atomic fraction of all magnetic elements to all magnetic and non-magnetic elements included in the second magnetic layer is smaller than that of the first magnetic layer.