A method for fabricating a semiconductor device includes forming a first mask pattern on a first film to extend in a first direction, forming a first spacer on either side wall of the first mask pattern, forming a second film to cover the first spacer and the first film, and forming a second mask pattern on the second film. The second mask pattern extends in a second direction different from the first direction. The method further includes forming a second spacer on either side wall of the second mask pattern, etching the first film using the first spacer and the second spacer as etch masks to form a contact pattern, and removing the first and second spacers to expose the contact pattern.